FQP3P50
  • Share:

onsemi FQP3P50

Manufacturer No:
FQP3P50
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET P-CH 500V 2.7A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQP3P50 is a P-Channel enhancement mode power MOSFET produced by onsemi (formerly Fairchild Semiconductor). This MOSFET utilizes Fairchild's proprietary planar stripe and DMOS technology, offering advanced performance and reliability in high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-500 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)3.5 A
RDS(ON) (On-Resistance)0.55 Ω (Typical at VGS = -10 V)
PD (Power Dissipation)62 W (at TC = 25°C)
TJ (Junction Temperature)-55°C to 150°C

Key Features

  • High voltage rating: -500 V drain-source voltage.
  • Low on-resistance: 0.55 Ω typical at VGS = -10 V.
  • High power dissipation: 62 W at TC = 25°C.
  • Wide operating temperature range: -55°C to 150°C junction temperature.
  • Advanced DMOS technology for improved performance and reliability.

Applications

The FQP3P50 is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power management systems.
  • Automotive and industrial power electronics.

Q & A

  1. What is the drain-source voltage rating of the FQP3P50 MOSFET?
    The drain-source voltage rating of the FQP3P50 is -500 V.
  2. What is the typical on-resistance of the FQP3P50?
    The typical on-resistance of the FQP3P50 is 0.55 Ω at VGS = -10 V.
  3. What is the maximum continuous drain current for the FQP3P50?
    The maximum continuous drain current for the FQP3P50 is 3.5 A.
  4. What is the junction temperature range for the FQP3P50?
    The junction temperature range for the FQP3P50 is -55°C to 150°C.
  5. What technology is used in the FQP3P50 MOSFET?
    The FQP3P50 MOSFET uses Fairchild's proprietary planar stripe and DMOS technology.
  6. What are some common applications for the FQP3P50?
    The FQP3P50 is commonly used in power supplies, DC-DC converters, motor control systems, and high-voltage switching applications.
  7. What is the power dissipation rating of the FQP3P50 at 25°C?
    The power dissipation rating of the FQP3P50 at 25°C is 62 W.
  8. Is the FQP3P50 suitable for automotive applications?
    Yes, the FQP3P50 is suitable for automotive and industrial power electronics applications.
  9. What is the gate-source voltage rating for the FQP3P50?
    The gate-source voltage rating for the FQP3P50 is ±20 V.
  10. Where can I find detailed specifications for the FQP3P50?
    Detailed specifications for the FQP3P50 can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.9Ohm @ 1.35A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.70
180

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQP3P50 FQP1P50 FQP3P20
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 200 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc) 1.5A (Tc) 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.9Ohm @ 1.35A, 10V 10.5Ohm @ 750mA, 10V 2.7Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 14 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 350 pF @ 25 V 250 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 85W (Tc) 63W (Tc) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5