onsemi FQD5N60CTM_F080

Manufacturer No:: FQD5N60CTM_F080
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 600V 2.8A DPAK
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Product Introduction

Overview

The FQD5N60CTM_F080 is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, which enhances its performance by reducing on-state resistance and providing superior switching capabilities and high avalanche energy strength. The MOSFET is packaged in a DPAK (TO-252AA) surface mount configuration, making it suitable for a variety of high-power applications.

Key Specifications

Parameter	Value
Part Number	FQD5N60CTM_F080
Manufacturer	onsemi
Channel Polarity	N-Channel
V_DS (Max)	600 V
I_D (Max) @ 25°C	2.8 A
R_DS(on) Max @ V_GS = 10 V	2.5 Ω
V_GS Max	±30 V
V_GS(th) Max	4 V
P_D Max @ T_C	49 W
Q_g Typ @ V_GS = 10 V	15 nC
C_rss Typ	6.5 pF
Package Type	DPAK (TO-252AA)
RoHS Status	Compliant

Key Features

Low on-state resistance (R_DS(on) = 2.5 Ω Max @ V_GS = 10 V)
Low gate charge (Q_g = 15 nC Typ @ V_GS = 10 V)
Low C_rss (Typ. 6.5 pF)
100% avalanche tested
RoHS compliant

Applications

Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
Lighting applications

Q & A

What is the maximum drain-source voltage (V_DS) of the FQD5N60CTM_F080 MOSFET?
The maximum drain-source voltage (V_DS) is 600 V.
What is the maximum continuous drain current (I_D) at 25°C?
The maximum continuous drain current (I_D) at 25°C is 2.8 A.
What is the typical on-state resistance (R_DS(on)) at V_GS = 10 V?
The typical on-state resistance (R_DS(on)) at V_GS = 10 V is 2.5 Ω.
What is the maximum gate-source voltage (V_GS)?
The maximum gate-source voltage (V_GS) is ±30 V.
Is the FQD5N60CTM_F080 MOSFET RoHS compliant?
What are the typical applications of the FQD5N60CTM_F080 MOSFET?
The typical applications include switched mode power supplies, active power factor correction (PFC), electronic lamp ballasts, and lighting applications.
What is the package type of the FQD5N60CTM_F080 MOSFET?
The package type is DPAK (TO-252AA).
What is the maximum power dissipation (P_D) at T_C?
The maximum power dissipation (P_D) at T_C is 49 W.
Is the FQD5N60CTM_F080 MOSFET 100% avalanche tested?
What is the typical gate charge (Q_g) at V_GS = 10 V? g) at V_GS = 10 V is 15 nC.

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Similar Products

Part Number	FQD5N60CTM_F080	FQD5N50CTM_F080
Manufacturer	onsemi	onsemi
Product Status	Obsolete	Obsolete
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	500 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.4A, 10V	1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V	24 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V	625 pF @ 25 V
FET Feature	-	-
Power Dissipation (Max)	2.5W (Ta), 49W (Tc)	2.5W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Supplier Device Package	TO-252AA	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	19 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	670 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 49W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63