Overview
The FQD5N60CTM_F080 is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, which enhances its performance by reducing on-state resistance and providing superior switching capabilities and high avalanche energy strength. The MOSFET is packaged in a DPAK (TO-252AA) surface mount configuration, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | FQD5N60CTM_F080 |
| Manufacturer | onsemi |
| Channel Polarity | N-Channel |
| VDS (Max) | 600 V |
| ID (Max) @ 25°C | 2.8 A |
| RDS(on) Max @ VGS = 10 V | 2.5 Ω |
| VGS Max | ±30 V |
| VGS(th) Max | 4 V |
| PD Max @ TC | 49 W |
| Qg Typ @ VGS = 10 V | 15 nC |
| Crss Typ | 6.5 pF |
| Package Type | DPAK (TO-252AA) |
| RoHS Status | Compliant |
Key Features
- Low on-state resistance (RDS(on) = 2.5 Ω Max @ VGS = 10 V)
- Low gate charge (Qg = 15 nC Typ @ VGS = 10 V)
- Low Crss (Typ. 6.5 pF)
- 100% avalanche tested
- RoHS compliant
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
- Lighting applications
Q & A
- What is the maximum drain-source voltage (VDS) of the FQD5N60CTM_F080 MOSFET?
The maximum drain-source voltage (VDS) is 600 V.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 2.8 A.
- What is the typical on-state resistance (RDS(on)) at VGS = 10 V?
The typical on-state resistance (RDS(on)) at VGS = 10 V is 2.5 Ω.
- What is the maximum gate-source voltage (VGS)?
The maximum gate-source voltage (VGS) is ±30 V.
- Is the FQD5N60CTM_F080 MOSFET RoHS compliant?
- What are the typical applications of the FQD5N60CTM_F080 MOSFET?
The typical applications include switched mode power supplies, active power factor correction (PFC), electronic lamp ballasts, and lighting applications.
- What is the package type of the FQD5N60CTM_F080 MOSFET?
The package type is DPAK (TO-252AA).
- What is the maximum power dissipation (PD) at TC?
The maximum power dissipation (PD) at TC is 49 W.
- Is the FQD5N60CTM_F080 MOSFET 100% avalanche tested?
- What is the typical gate charge (Qg) at VGS = 10 V?
g) at VGS = 10 V is 15 nC.
