FQD5N60CTM_F080
  • Share:

onsemi FQD5N60CTM_F080

Manufacturer No:
FQD5N60CTM_F080
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 2.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD5N60CTM_F080 is an N-Channel enhancement mode power MOSFET produced by onsemi. This device is fabricated using a proprietary planar stripe and DMOS technology, which enhances its performance by reducing on-state resistance and providing superior switching capabilities and high avalanche energy strength. The MOSFET is packaged in a DPAK (TO-252AA) surface mount configuration, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value
Part Number FQD5N60CTM_F080
Manufacturer onsemi
Channel Polarity N-Channel
VDS (Max) 600 V
ID (Max) @ 25°C 2.8 A
RDS(on) Max @ VGS = 10 V 2.5 Ω
VGS Max ±30 V
VGS(th) Max 4 V
PD Max @ TC 49 W
Qg Typ @ VGS = 10 V 15 nC
Crss Typ 6.5 pF
Package Type DPAK (TO-252AA)
RoHS Status Compliant

Key Features

  • Low on-state resistance (RDS(on) = 2.5 Ω Max @ VGS = 10 V)
  • Low gate charge (Qg = 15 nC Typ @ VGS = 10 V)
  • Low Crss (Typ. 6.5 pF)
  • 100% avalanche tested
  • RoHS compliant

Applications

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • Lighting applications

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FQD5N60CTM_F080 MOSFET?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 2.8 A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10 V?

    The typical on-state resistance (RDS(on)) at VGS = 10 V is 2.5 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±30 V.

  5. Is the FQD5N60CTM_F080 MOSFET RoHS compliant?
  6. What are the typical applications of the FQD5N60CTM_F080 MOSFET?

    The typical applications include switched mode power supplies, active power factor correction (PFC), electronic lamp ballasts, and lighting applications.

  7. What is the package type of the FQD5N60CTM_F080 MOSFET?

    The package type is DPAK (TO-252AA).

  8. What is the maximum power dissipation (PD) at TC?

    The maximum power dissipation (PD) at TC is 49 W.

  9. Is the FQD5N60CTM_F080 MOSFET 100% avalanche tested?
  10. What is the typical gate charge (Qg) at VGS = 10 V? g) at VGS = 10 V is 15 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 49W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
215

Please send RFQ , we will respond immediately.

Same Series
FQU5N60CTU
FQU5N60CTU
MOSFET N-CH 600V 2.8A IPAK
FQD5N60CTM
FQD5N60CTM
MOSFET N-CH 600V 2.8A DPAK
FQD5N60CTF
FQD5N60CTF
MOSFET N-CH 600V 2.8A DPAK
FQD5N60CTM_F080
FQD5N60CTM_F080
MOSFET N-CH 600V 2.8A DPAK

Similar Products

Part Number FQD5N60CTM_F080 FQD5N50CTM_F080
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V 1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 24 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V 625 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 49W (Tc) 2.5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4