Overview
The FQD16N25CTM is an N-Channel Enhancement Mode Power MOSFET produced by onsemi. This device utilizes onsemi’s proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. The MOSFET is packaged in a DPAK (TO-252) surface mount configuration, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | 250 | V |
| Continuous Drain Current (ID) at TC = 25°C | 16 | A |
| Continuous Drain Current (ID) at TC = 100°C | 10.1 | A |
| Pulsed Drain Current (IDM) | 64 | A |
| Gate-Source Voltage (VGSS) | ±30 | V |
| Single Pulsed Avalanche Energy (EAS) | 432 | mJ |
| Avalanche Current (IAR) | 16 | A |
| Repetitive Avalanche Energy (EAR) | 160 | mJ |
| Peak Diode Recovery dv/dt | 5.5 | V/ns |
| Power Dissipation (PD) at TC = 25°C | 160 | W |
| Derate Above 25°C | 1.28 | W/°C |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.78 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 110 | °C/W |
| On-State Resistance (RDS(on)) at VGS = 10 V, ID = 8 A | 270 | mΩ |
| Total Gate Charge (Qg) at VDS = 200 V, ID = 16 A, VGS = 10 V | 41 | nC |
Key Features
- Low on-state resistance (RDS(on) = 270 mΩ at VGS = 10 V, ID = 8 A)
- Low gate charge (Typ. 41 nC)
- Low Crss (Typ. 68 pF)
- 100% Avalanche Tested
- Pb-Free
- Superior switching performance and high avalanche energy strength
- Reduced voltage spikes and overshoot
- Lower junction capacitance and reverse recovery charge
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
- DC-DC Converters
- Plasma Display Panels (PDP)
- Lighting ballasts
- Motion control
Q & A
- What is the maximum drain-source voltage of the FQD16N25CTM MOSFET?
The maximum drain-source voltage (VDSS) is 250 V.
- What is the continuous drain current rating at 25°C and 100°C?
The continuous drain current (ID) is 16 A at 25°C and 10.1 A at 100°C.
- What is the typical total gate charge of the FQD16N25CTM?
The typical total gate charge (Qg) is 41 nC at VDS = 200 V, ID = 16 A, and VGS = 10 V.
- What are the thermal resistance values for junction-to-case and junction-to-ambient?
The thermal resistance from junction-to-case (RθJC) is 0.78 °C/W, and from junction-to-ambient (RθJA) is 110 °C/W.
- What is the maximum operating temperature of the FQD16N25CTM?
The maximum operating temperature is +150 °C.
- Is the FQD16N25CTM Pb-Free?
Yes, the FQD16N25CTM is Pb-Free.
- What are some common applications for the FQD16N25CTM MOSFET?
Common applications include switched mode power supplies, active power factor correction (PFC), electronic lamp ballasts, DC-DC converters, and motion control.
- What is the package type of the FQD16N25CTM?
The package type is DPAK (TO-252), which is a surface mount configuration.
- What is the maximum power dissipation of the FQD16N25CTM at 25°C?
The maximum power dissipation (PD) at 25°C is 160 W.
- How does the FQD16N25CTM reduce system complexity?
The FQD16N25CTM reduces system complexity by eliminating the need for additional external components due to its low junction capacitance and reverse recovery charge.
