FQD12N20LTM_SN00173
  • Share:

onsemi FQD12N20LTM_SN00173

Manufacturer No:
FQD12N20LTM_SN00173
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD12N20LTM, produced by onsemi, is an N-Channel enhancement mode power MOSFET. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. This MOSFET is suitable for a variety of high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDSS)200V
Continuous Drain Current (ID) at TC = 25°C9.0A
Continuous Drain Current (ID) at TC = 100°C5.7A
Pulsed Drain Current (IDM)36A
Gate-Source Voltage (VGSS)±20V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.5 A280 mΩ (Max.)
Gate Threshold Voltage (VGS(th))1.0 - 2.0V
Power Dissipation (PD) at TA = 25°C2.5W
Thermal Resistance, Junction to Case (RJC)2.27°C/W
Operating and Storage Temperature Range (TJ, TSTG)-55 to +150°C

Key Features

  • Low on-state resistance (RDS(on) = 280 mΩ Max. at VGS = 10 V, ID = 4.5 A)
  • Low gate charge (Typ. 16 nC)
  • Low Crss (Typ. 17 pF)
  • 100% avalanche tested
  • High avalanche energy strength
  • Superior switching performance

Applications

The FQD12N20LTM is suitable for various high-power applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD12N20LTM?
    The maximum drain-source voltage (VDSS) is 200 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 9.0 A at 25°C and 5.7 A at 100°C.
  3. What is the maximum pulsed drain current?
    The maximum pulsed drain current (IDM) is 36 A.
  4. What is the gate-source voltage range?
    The gate-source voltage (VGSS) range is ±20 V.
  5. What is the typical gate charge?
    The typical gate charge is 16 nC.
  6. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case (RJC) is 2.27 °C/W, and from junction to ambient (RJA) is 110 °C/W (minimum pad of 2-oz copper).
  7. What is the operating and storage temperature range?
    The operating and storage temperature range (TJ, TSTG) is -55 to +150 °C.
  8. What are the typical applications of the FQD12N20LTM?
    The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  9. Is the FQD12N20LTM 100% avalanche tested?
    Yes, the FQD12N20LTM is 100% avalanche tested.
  10. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C for 1/8” from the case for 5 seconds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
112

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4