FQD12N20LTM_SN00173
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onsemi FQD12N20LTM_SN00173

Manufacturer No:
FQD12N20LTM_SN00173
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD12N20LTM, produced by onsemi, is an N-Channel enhancement mode power MOSFET. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. This MOSFET is suitable for a variety of high-power applications, including switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDSS)200V
Continuous Drain Current (ID) at TC = 25°C9.0A
Continuous Drain Current (ID) at TC = 100°C5.7A
Pulsed Drain Current (IDM)36A
Gate-Source Voltage (VGSS)±20V
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.5 A280 mΩ (Max.)
Gate Threshold Voltage (VGS(th))1.0 - 2.0V
Power Dissipation (PD) at TA = 25°C2.5W
Thermal Resistance, Junction to Case (RJC)2.27°C/W
Operating and Storage Temperature Range (TJ, TSTG)-55 to +150°C

Key Features

  • Low on-state resistance (RDS(on) = 280 mΩ Max. at VGS = 10 V, ID = 4.5 A)
  • Low gate charge (Typ. 16 nC)
  • Low Crss (Typ. 17 pF)
  • 100% avalanche tested
  • High avalanche energy strength
  • Superior switching performance

Applications

The FQD12N20LTM is suitable for various high-power applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD12N20LTM?
    The maximum drain-source voltage (VDSS) is 200 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 9.0 A at 25°C and 5.7 A at 100°C.
  3. What is the maximum pulsed drain current?
    The maximum pulsed drain current (IDM) is 36 A.
  4. What is the gate-source voltage range?
    The gate-source voltage (VGSS) range is ±20 V.
  5. What is the typical gate charge?
    The typical gate charge is 16 nC.
  6. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case (RJC) is 2.27 °C/W, and from junction to ambient (RJA) is 110 °C/W (minimum pad of 2-oz copper).
  7. What is the operating and storage temperature range?
    The operating and storage temperature range (TJ, TSTG) is -55 to +150 °C.
  8. What are the typical applications of the FQD12N20LTM?
    The typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  9. Is the FQD12N20LTM 100% avalanche tested?
    Yes, the FQD12N20LTM is 100% avalanche tested.
  10. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C for 1/8” from the case for 5 seconds.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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