FQD12N20LTM-F085
  • Share:

onsemi FQD12N20LTM-F085

Manufacturer No:
FQD12N20LTM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD12N20LTM-F085, produced by onsemi, is an N-Channel enhancement mode power MOSFET. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDS)200V
Continuous Drain Current (ID) at TC = 25°C9.0A
Continuous Drain Current (ID) at TC = 100°C5.7A
Pulsed Drain Current (IDM)36A
Gate-Source Voltage (VGS)±20V
Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.5 A280 mΩ
Total Gate Charge (Qg)16 nC (Typ.)nC
Thermal Resistance, Junction to Case (RθJC)2.27 °C/W°C/W
Operating and Storage Temperature Range-55 to +150°C

Key Features

  • Low on-state resistance (RDS(on)) of 280 mΩ (Max.) at VGS = 10 V, ID = 4.5 A
  • Low gate charge (Typ. 16 nC)
  • Low Crss (Typ. 17 pF)
  • 100% Avalanche tested
  • High avalanche energy strength
  • Superior switching performance

Applications

The FQD12N20LTM-F085 is suitable for various high-performance applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD12N20LTM-F085?
    The maximum drain-source voltage is 200 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 9.0 A at 25°C and 5.7 A at 100°C.
  3. What is the maximum pulsed drain current?
    The maximum pulsed drain current is 36 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ±20 V.
  5. What is the typical total gate charge?
    The typical total gate charge is 16 nC.
  6. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case is 2.27 °C/W, and from junction to ambient is 110 °C/W (with a minimum pad of 2-oz copper).
  7. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150 °C.
  8. What are some typical applications for this MOSFET?
    Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  9. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C for 1/8” from the case for 5 seconds.
  10. Is the device 100% avalanche tested?
    Yes, the device is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.56
824

Please send RFQ , we will respond immediately.

Same Series
FQD12N20LTM-F085
FQD12N20LTM-F085
MOSFET N-CH 200V 9A DPAK
FQD12N20LTF
FQD12N20LTF
MOSFET N-CH 200V 9A DPAK

Similar Products

Part Number FQD12N20LTM-F085 FQD12N20LTM-F085P
Manufacturer onsemi onsemi
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 5 V 21 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V 1080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5