FQD12N20LTM-F085
  • Share:

onsemi FQD12N20LTM-F085

Manufacturer No:
FQD12N20LTM-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 9A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD12N20LTM-F085, produced by onsemi, is an N-Channel enhancement mode power MOSFET. This device is fabricated using onsemi's proprietary planar stripe and DMOS technology, which is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength.

Key Specifications

ParameterRatingUnit
Drain-Source Voltage (VDS)200V
Continuous Drain Current (ID) at TC = 25°C9.0A
Continuous Drain Current (ID) at TC = 100°C5.7A
Pulsed Drain Current (IDM)36A
Gate-Source Voltage (VGS)±20V
Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 4.5 A280 mΩ
Total Gate Charge (Qg)16 nC (Typ.)nC
Thermal Resistance, Junction to Case (RθJC)2.27 °C/W°C/W
Operating and Storage Temperature Range-55 to +150°C

Key Features

  • Low on-state resistance (RDS(on)) of 280 mΩ (Max.) at VGS = 10 V, ID = 4.5 A
  • Low gate charge (Typ. 16 nC)
  • Low Crss (Typ. 17 pF)
  • 100% Avalanche tested
  • High avalanche energy strength
  • Superior switching performance

Applications

The FQD12N20LTM-F085 is suitable for various high-performance applications, including:

  • Switched mode power supplies
  • Active power factor correction (PFC)
  • Electronic lamp ballasts

Q & A

  1. What is the maximum drain-source voltage of the FQD12N20LTM-F085?
    The maximum drain-source voltage is 200 V.
  2. What is the continuous drain current at 25°C and 100°C?
    The continuous drain current is 9.0 A at 25°C and 5.7 A at 100°C.
  3. What is the maximum pulsed drain current?
    The maximum pulsed drain current is 36 A.
  4. What is the gate-source voltage range?
    The gate-source voltage range is ±20 V.
  5. What is the typical total gate charge?
    The typical total gate charge is 16 nC.
  6. What are the thermal resistance values for junction to case and junction to ambient?
    The thermal resistance from junction to case is 2.27 °C/W, and from junction to ambient is 110 °C/W (with a minimum pad of 2-oz copper).
  7. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150 °C.
  8. What are some typical applications for this MOSFET?
    Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  9. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 300 °C for 1/8” from the case for 5 seconds.
  10. Is the device 100% avalanche tested?
    Yes, the device is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.56
824

Please send RFQ , we will respond immediately.

Same Series
FQD12N20LTM-F085
FQD12N20LTM-F085
MOSFET N-CH 200V 9A DPAK
FQD12N20LTF
FQD12N20LTF
MOSFET N-CH 200V 9A DPAK

Similar Products

Part Number FQD12N20LTM-F085 FQD12N20LTM-F085P
Manufacturer onsemi onsemi
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 5 V 21 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 25 V 1080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC