Overview
The FQD12N20LTM-F085P is an N-Channel enhancement mode power MOSFET produced by onsemi. This device utilizes a proprietary planar stripe and DMOS technology, designed to minimize on-state resistance and enhance switching performance. It also boasts high avalanche energy strength, making it suitable for various high-performance applications.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 9 A |
| Rds(on) Max @ Vgs = 10 V | 280 mΩ |
| Gate Level | Logic Level |
| Gate Charge (Typ.) @ Vgs = 10 V | 16 nC |
| Crss (Typ.) | 17 pF |
| Package Type | DPAK-3 / TO-252-3 |
Key Features
- Low on-state resistance (Rds(on) = 280 mΩ Max. @ Vgs = 10 V, Id = 4.5 A)
- Low gate charge (Typ. 16 nC)
- Low Crss (Typ. 17 pF)
- 100% avalanche tested
- Low level gate drive requirement allowing direct operation from logic drivers
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
- LED TV
- CRT/RPTV
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation and Server & Mainframe systems
Q & A
- What is the drain-source breakdown voltage of the FQD12N20LTM-F085P?
The drain-source breakdown voltage is 200 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 9 A. - What is the typical gate charge at Vgs = 10 V?
The typical gate charge is 16 nC. - What is the package type of the FQD12N20LTM-F085P?
The package type is DPAK-3 / TO-252-3. - Is the FQD12N20LTM-F085P suitable for high-frequency switching applications?
Yes, it is designed for superior switching performance and high avalanche energy strength. - Can the FQD12N20LTM-F085P be driven directly from logic drivers?
Yes, it has a low level gate drive requirement allowing direct operation from logic drivers. - What are some common applications of the FQD12N20LTM-F085P?
Common applications include switched mode power supplies, active power factor correction (PFC), electronic lamp ballasts, and various server and workstation systems. - What technology is used in the FQD12N20LTM-F085P?
The device uses a proprietary planar stripe and DMOS technology. - Is the FQD12N20LTM-F085P 100% avalanche tested?
Yes, it is 100% avalanche tested. - What is the typical Crss value of the FQD12N20LTM-F085P?
The typical Crss value is 17 pF.
