Overview
The FQD10N20CTM_F080 is an N-Channel QFET® MOSFET produced by onsemi. This device is designed for high-performance applications requiring robust electrical and thermal characteristics. It features a drain-source voltage (VDSS) of 200 V and a continuous drain current (ID) of 7.8 A at 25°C. The MOSFET is available in the TO-252AA (D-PAK) package, making it suitable for surface mount applications. This component is ideal for use in power management, motor control, and other high-power electronic systems.
Key Specifications
| Parameter | Symbol | Unit | Value |
|---|---|---|---|
| Drain-Source Voltage | VDSS | V | 200 |
| Continuous Drain Current (TC = 25°C) | ID | A | 7.8 |
| Pulsed Drain Current | IDM | A | 31.2 |
| Gate-Source Voltage | VGSS | V | ±30 |
| Power Dissipation (TC = 25°C) | PD | W | 50 |
| Thermal Resistance, Junction-to-Case | RθJC | °C/W | 2.5 |
| Thermal Resistance, Junction-to-Ambient | RθJA | °C/W | 110 |
| On-Resistance (RDS(on)) | RDS(on) | mΩ | 360 @ VGS = 10 V, ID = 3.9 A |
| Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to +150 |
Key Features
- High drain-source voltage (VDSS) of 200 V and continuous drain current (ID) of 7.8 A at 25°C.
- Low on-resistance (RDS(on)) of 360 mΩ at VGS = 10 V and ID = 3.9 A.
- Low gate charge (Qg) of 20 nC (typical).
- Low input capacitance (Ciss) and reverse transfer capacitance (Crss).
- 100% avalanche tested.
- Wide operating and storage temperature range of -55°C to +150°C.
Applications
- Power management systems.
- Motor control and drive systems.
- High-power switching applications.
- DC-DC converters and power supplies.
- Automotive and industrial control systems.
Q & A
- What is the maximum drain-source voltage of the FQD10N20CTM_F080 MOSFET?
The maximum drain-source voltage (VDSS) is 200 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 7.8 A.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 360 mΩ at VGS = 10 V and ID = 3.9 A.
- What is the maximum gate-source voltage?
The maximum gate-source voltage (VGSS) is ±30 V.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 2.5 °C/W.
- What is the operating and storage temperature range?
The operating and storage temperature range is -55°C to +150°C.
- What is the package type of the FQD10N20CTM_F080 MOSFET?
The package type is TO-252AA (D-PAK).
- Is the FQD10N20CTM_F080 MOSFET 100% avalanche tested?
Yes, the FQD10N20CTM_F080 MOSFET is 100% avalanche tested.
- What are some typical applications for this MOSFET?
Typical applications include power management systems, motor control and drive systems, high-power switching applications, DC-DC converters, and automotive and industrial control systems.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) at 25°C is 50 W.
