FQD10N20CTM
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onsemi FQD10N20CTM

Manufacturer No:
FQD10N20CTM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 7.8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD10N20CTM is a high-performance N-channel MOSFET produced by onsemi. This device is part of the QFET® series and is designed for a wide range of power management applications. It features a robust DPAK (TO-252AA) package, making it suitable for high-power and high-efficiency requirements.

Key Specifications

Product AttributeAttribute Value
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current7.8 A
Rds On - Drain-Source Resistance360 mOhms
Power Dissipation50 W
Package TypeDPAK (TO-252AA)

Key Features

  • High drain-source breakdown voltage of 200 V, ensuring robust performance under high-voltage conditions.
  • Continuous drain current of 7.8 A, suitable for high-current applications.
  • Low on-resistance (Rds On) of 360 mOhms, minimizing power losses and enhancing efficiency.
  • High power dissipation of 50 W, making it ideal for demanding power management tasks.
  • Compact DPAK (TO-252AA) package, offering a balance between thermal performance and space efficiency.

Applications

The FQD10N20CTM is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.
  • General-purpose power switching applications.

Q & A

  1. What is the drain-source breakdown voltage of the FQD10N20CTM?
    The drain-source breakdown voltage is 200 V.
  2. What is the continuous drain current of the FQD10N20CTM?
    The continuous drain current is 7.8 A.
  3. What is the on-resistance (Rds On) of the FQD10N20CTM?
    The on-resistance (Rds On) is 360 mOhms.
  4. What is the power dissipation of the FQD10N20CTM?
    The power dissipation is 50 W.
  5. What package type does the FQD10N20CTM use?
    The package type is DPAK (TO-252AA).
  6. Is the FQD10N20CTM suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high breakdown voltage.
  7. Can the FQD10N20CTM be used in automotive applications?
    Yes, it can be used in automotive and industrial power management systems.
  8. What is the typical use case for the FQD10N20CTM in power supplies?
    It is often used in power supplies and DC-DC converters for its high efficiency and reliability.
  9. Is the FQD10N20CTM RoHS compliant?
    Yes, the FQD10N20CTM is RoHS compliant.
  10. Where can I find detailed specifications for the FQD10N20CTM?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
FQU10N20CTU
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MOSFET N-CH 200V 7.8A DPAK
FQD10N20CTM
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MOSFET N-CH 200V 7.8A DPAK

Similar Products

Part Number FQD10N20CTM FQD10N20LTM FQD10N20TM FQD10N20CTF
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 7.8A (Tc) 7.6A (Tc) 7.6A (Tc) 7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3.9A, 10V 360mOhm @ 3.8A, 10V 360mOhm @ 3.8A, 10V 360mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 17 nC @ 5 V 18 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V 830 pF @ 25 V 670 pF @ 25 V 510 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 50W (Tc) 2.5W (Ta), 51W (Tc) 2.5W (Ta), 51W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA D-Pak TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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