Overview
The FQA9N90C-F109 is an N-Channel enhancement mode power MOSFET produced by onsemi, utilizing proprietary planar stripe and DMOS technology. This advanced technology is designed to reduce on-state resistance and provide superior switching performance along with high avalanche energy strength. Although this product is currently obsolete, it was highly regarded for its performance in various high-voltage applications.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 900 V |
| Drain Current (ID) | 9.0 A |
| On-State Resistance (RDS(on)) | 1.4 Ω @ VGS = 10 V, ID = 4.5 A |
| Gate-Source Voltage (VGS) | ±30 V |
| Threshold Voltage (VGS(th)) | 5 V |
| Gate Charge (Qg) | Typ. 45 nC @ VGS = 10 V |
| Reverse Recovery Charge (Qrr) | Typ. 18 nC |
| Input Capacitance (Ciss) | Typ. 2100 pF |
| Output Capacitance (Coss) | Typ. 6500 pF |
| Reverse Transfer Capacitance (Crss) | Typ. 14 pF |
| Package Type | TO-3P-3L |
Key Features
- Low on-state resistance (RDS(on)) of 1.4 Ω @ VGS = 10 V, ID = 4.5 A
- Low gate charge (Typ. 45 nC) and low reverse recovery charge (Typ. 18 nC)
- 100% avalanche tested for reliability
- RoHS compliant
- High switching performance and high avalanche energy strength
Applications
- Switched mode power supplies
- Active power factor correction (PFC)
- Electronic lamp ballasts
- AC-DC merchant power supplies for servers, workstations, and desktop PCs
Q & A
- What is the drain-source voltage rating of the FQA9N90C-F109 MOSFET?
The drain-source voltage rating is 900 V. - What is the maximum drain current for this MOSFET?
The maximum drain current is 9.0 A. - What is the on-state resistance of the FQA9N90C-F109?
The on-state resistance is 1.4 Ω @ VGS = 10 V, ID = 4.5 A. - Is the FQA9N90C-F109 RoHS compliant?
Yes, the FQA9N90C-F109 is RoHS compliant. - What are the typical applications for this MOSFET?
Typical applications include switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. - What is the gate charge for this MOSFET?
The typical gate charge is 45 nC @ VGS = 10 V. - What is the package type of the FQA9N90C-F109?
The package type is TO-3P-3L. - Has the FQA9N90C-F109 been 100% avalanche tested?
Yes, it has been 100% avalanche tested. - What is the reverse transfer capacitance (Crss) of this MOSFET?
The typical reverse transfer capacitance is 14 pF. - Is the FQA9N90C-F109 currently available for purchase?
No, the FQA9N90C-F109 is currently obsolete and not available for purchase.
