FDWS9511L-F085
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onsemi FDWS9511L-F085

Manufacturer No:
FDWS9511L-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 30A 8DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS9511L-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. It features a small footprint of 5x6 mm, making it ideal for compact design requirements. The MOSFET is part of onsemi's PowerTrench® technology, known for its advanced trench gate structure that enhances electrical performance and reduces thermal resistance.

Key Specifications

Parameter Test Conditions Min. Typ. Max. Units
VDSS (Drain-to-Source Voltage) ID = -250μA, VGS = 0V -40 - - V
VGS (Gate-to-Source Voltage) - - ±16 - V
ID (Continuous Drain Current) VGS = -10V, TC = 25°C - -80 - A
PD (Power Dissipation) - - 214 - W
TJ, TSTG (Operating and Storage Temperature) - -55 - 175 °C
RθJC (Thermal Resistance, Junction to Case) - - 0.7 - °C/W
RDS(on) (Drain to Source On Resistance) ID = -80A, VGS = -10V, TJ = 25°C - 3.6 4.9
Qg(tot) (Total Gate Charge) VGS = 0 to -10V, VDD = -32V, ID = -80A - 82 107 nC

Key Features

  • Low RDS(on): Minimizes conduction losses, with a typical value of 3.6 mΩ at VGS = -10V and ID = -80A.
  • Low Qg and Capacitance: Reduces driver losses, with a total gate charge (Qg(tot)) of 82 nC at VGS = 0 to -10V, VDD = -32V, and ID = -80A.
  • Compact Design: Small footprint of 5x6 mm, ideal for space-constrained applications.
  • High Current Capability: Continuous drain current of -80A and pulsed drain current as specified in the datasheet.
  • Thermal Performance: Low thermal resistance (RθJC = 0.7°C/W) and high power dissipation capability (214 W).
  • RoHS Compliant and AEC Q101 Qualified: Ensures environmental compliance and reliability in automotive applications).
  • Wettable Flanks for AOI: Facilitates automatic optical inspection (AOI) for quality control).

Applications

  • Automotive Engine Control: Suitable for engine management systems and other high-power automotive applications).
  • PowerTrain Management: Used in powertrain control modules and other power management systems).
  • Solenoid and Motor Drivers: Ideal for driving solenoids and motors in various automotive and industrial applications).
  • Electrical Power Steering: Used in electric power steering systems for efficient and reliable operation).
  • Integrated Starter/Alternator: Suitable for integrated starter/alternator systems in vehicles).
  • Distributed Power Architectures and VRM: Used in distributed power architectures and voltage regulator modules (VRM) for efficient power management).
  • Primary Switch for 12V Systems: Can be used as the primary switch in 12V automotive systems).

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDWS9511L-F085?

    The maximum drain-to-source voltage (VDSS) is -40V).

  2. What is the typical on-resistance (RDS(on)) of the FDWS9511L-F085?

    The typical on-resistance (RDS(on)) is 3.6 mΩ at VGS = -10V and ID = -80A).

  3. What is the maximum continuous drain current (ID) of the FDWS9511L-F085?

    The maximum continuous drain current (ID) is -80A at VGS = -10V and TC = 25°C).

  4. Is the FDWS9511L-F085 RoHS compliant?
  5. What is the thermal resistance (RθJC) of the FDWS9511L-F085?

    The thermal resistance (RθJC) is 0.7°C/W).

  6. What are the typical applications of the FDWS9511L-F085?

    The FDWS9511L-F085 is typically used in automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, integrated starter/alternator, and distributed power architectures).

  7. What is the package type of the FDWS9511L-F085?

    The package type is PQFN8 5x6 mm).

  8. Is the FDWS9511L-F085 qualified to AEC Q101 standards?
  9. What is the maximum power dissipation (PD) of the FDWS9511L-F085?

    The maximum power dissipation (PD) is 214 W).

  10. Does the FDWS9511L-F085 support automatic optical inspection (AOI)?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):68.2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5.1x6.3)
Package / Case:8-PowerTDFN
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