Overview
The FDV301N-F169 is an N-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi using their proprietary, high cell density DMOS technology. This device is designed to minimize on-state resistance, making it ideal for low voltage applications. It can replace multiple digital transistors with different bias resistor values, eliminating the need for bias resistors. The FDV301N-F169 is suitable for a wide range of applications due to its versatile design and low gate drive requirements.
Key Specifications
| Parameter | Unit | Value |
|---|---|---|
| Drain-Source Voltage (VDSS) | V | 25 |
| Gate-Source Voltage (VGSS) | V | 8 |
| Continuous Drain Current (ID) | A | 0.22 |
| Peak Drain Current (ID) | A | 0.5 |
| Maximum Power Dissipation (PD) | W | 0.35 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 to 150 |
| On-State Resistance (RDS(on)) @ VGS = 2.7 V | Ω | 5 |
| On-State Resistance (RDS(on)) @ VGS = 4.5 V | Ω | 4 |
| Threshold Gate-Source Voltage (VGS(th)) | V | < 1.06 |
| Electrostatic Discharge Rating (ESD) | kV | > 6 (Human Body Model) |
Key Features
- Very low on-state resistance: RDS(on) = 5 Ω @ VGS = 2.7 V and RDS(on) = 4 Ω @ VGS = 4.5 V.
- Very low level gate drive requirements, allowing direct operation in 3V circuits with VGS(th) < 1.06 V.
- Gate-Source Zener for ESD ruggedness, with an ESD rating of > 6 kV (Human Body Model).
- Pb-Free and Halide-Free, making it environmentally friendly.
- Can replace multiple NPN digital transistors with one DMOS FET, reducing component count and complexity.
Applications
The FDV301N-F169 is versatile and suitable for many different applications, particularly in low voltage circuits. It is ideal for replacing digital transistors in various electronic designs, such as inverter circuits, logic gates, and other digital switching applications. Its low gate drive requirements make it compatible with 3V circuits, which is beneficial in battery-powered devices and other low-power systems.
Q & A
- What is the maximum drain-source voltage of the FDV301N-F169?
The maximum drain-source voltage (VDSS) is 25 V. - What is the continuous drain current rating of the FDV301N-F169?
The continuous drain current (ID) is 0.22 A. - What is the peak drain current rating of the FDV301N-F169?
The peak drain current (ID) is 0.5 A. - What is the on-state resistance of the FDV301N-F169 at VGS = 2.7 V?
The on-state resistance (RDS(on)) at VGS = 2.7 V is 5 Ω. - What is the threshold gate-source voltage of the FDV301N-F169?
The threshold gate-source voltage (VGS(th)) is less than 1.06 V. - Is the FDV301N-F169 Pb-Free and Halide-Free?
Yes, the FDV301N-F169 is Pb-Free and Halide-Free. - What is the ESD rating of the FDV301N-F169?
The ESD rating is greater than 6 kV (Human Body Model). - Can the FDV301N-F169 replace multiple NPN digital transistors?
Yes, the FDV301N-F169 can replace multiple NPN digital transistors with different bias resistor values. - What is the operating temperature range of the FDV301N-F169?
The operating and storage temperature range is -55 to 150 °C. - What package type is the FDV301N-F169 available in?
The FDV301N-F169 is available in the SOT-23-3 package.
