FDT3612-SB82273
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onsemi FDT3612-SB82273

Manufacturer No:
FDT3612-SB82273
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 3.7A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT3612-SB82273 is an N-Channel MOSFET from onsemi, designed to enhance the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This device features the POWERTRENCH® technology, which offers faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This results in higher overall efficiency and safer operation, even at very high frequencies.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vdss)100V
Gate-Source Voltage (Vgss)±20V
Continuous Drain Current (Id)3.7A
Pulsed Drain Current (Id)20A
Maximum Power Dissipation (Pd)1.1W
Operating and Storage Temperature Range (TJ, TSTG)-55 to +150°C
RDS(ON) @ Vgs = 10 V120 mΩ
RDS(ON) @ Vgs = 6 V130 mΩ
Gate Charge (Qg)14 nC (Typ), 20 nC (Max)nC
Input Capacitance (Ciss)632 pFpF
Output Capacitance (Coss)40 pFpF
Reverse Transfer Capacitance (Crss)20 pFpF

Key Features

  • High Performance Trench Technology for extremely low RDS(ON)
  • Fast Switching Speed
  • Low Gate Charge (14 nC Typ)
  • High Power and Current Handling Capability in a widely used Surface Mount Package (SOT-223)
  • Pb-Free Device
  • High Efficiency and Safe Operation at High Frequencies

Applications

  • DC/DC Converters
  • Power Management
  • High-Performance Motor Drives
  • Industrial Controls

Q & A

  1. What is the maximum drain-source voltage of the FDT3612-SB82273? The maximum drain-source voltage (Vdss) is 100 V.
  2. What is the continuous drain current rating of this MOSFET? The continuous drain current (Id) is 3.7 A at 25°C.
  3. What is the typical gate charge of the FDT3612-SB82273? The typical gate charge (Qg) is 14 nC.
  4. What package type is used for the FDT3612-SB82273? The device is packaged in a SOT-223-4 package.
  5. Is the FDT3612-SB82273 a Pb-Free device? Yes, it is a Pb-Free device.
  6. What are the operating and storage temperature ranges for this MOSFET? The operating and storage temperature range is -55°C to +150°C.
  7. What are some typical applications of the FDT3612-SB82273? Typical applications include DC/DC converters, power management, high-performance motor drives, and industrial controls.
  8. What is the maximum power dissipation of the FDT3612-SB82273? The maximum power dissipation (Pd) is 1.1 W.
  9. What is the RDS(ON) at Vgs = 10 V and Vgs = 6 V? The RDS(ON) is 120 mΩ at Vgs = 10 V and 130 mΩ at Vgs = 6 V.
  10. Is the FDT3612-SB82273 still in production? No, the FDT3612-SB82273 is obsolete and no longer manufactured.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:120mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:632 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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