FDS86267P
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onsemi FDS86267P

Manufacturer No:
FDS86267P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 150V 2.2A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS86267P is a P-Channel MOSFET produced by onsemi, utilizing an advanced PowerTrench process that incorporates shielded gate technology. This technology enhances the device's performance by reducing gate charge and improving switching characteristics. The MOSFET is designed for high-efficiency applications, particularly in motor driver and power management systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)150 V
Current Rating (Id)2.2 A
On-Resistance (Rds(on))0.191 ohm
Gate Threshold Voltage (Vgs(th))1 to 3 V
Package TypeSOIC, Surface Mount
Gate LevelStandard 40V

Key Features

  • Advanced PowerTrench process with shielded gate technology for reduced gate charge and improved switching performance.
  • Low on-resistance (Rds(on)) of 0.191 ohm, enhancing efficiency in high-current applications.
  • High voltage rating of 150 V, suitable for a wide range of power management and motor driver applications.
  • Standard 40V gate level, ensuring compatibility with common gate drive circuits.
  • Surface mount SOIC package, facilitating easy integration into modern PCB designs.

Applications

The FDS86267P is particularly suited for applications requiring high efficiency and reliability, such as:

  • Motor drivers: The low on-resistance and high current capability make it ideal for motor control circuits.
  • Power management: Used in power supply circuits, DC-DC converters, and other power management systems.
  • Automotive systems: Suitable for various automotive applications due to its robust performance and reliability.
  • Industrial control systems: Employed in industrial control circuits where high efficiency and durability are essential.

Q & A

  1. What is the voltage rating of the FDS86267P MOSFET?
    The voltage rating (Vds) of the FDS86267P is 150 V.
  2. What is the current rating of the FDS86267P?
    The current rating (Id) of the FDS86267P is 2.2 A.
  3. What is the on-resistance (Rds(on)) of the FDS86267P?
    The on-resistance (Rds(on)) of the FDS86267P is 0.191 ohm.
  4. What package type is the FDS86267P available in?
    The FDS86267P is available in a SOIC, surface mount package.
  5. What is the gate level of the FDS86267P?
    The gate level of the FDS86267P is standard 40V.
  6. What technology is used in the FDS86267P?
    The FDS86267P uses an advanced PowerTrench process with shielded gate technology.
  7. What are some common applications of the FDS86267P?
    The FDS86267P is commonly used in motor drivers, power management systems, automotive systems, and industrial control systems.
  8. Why is the FDS86267P suitable for motor driver applications?
    The FDS86267P is suitable for motor driver applications due to its low on-resistance and high current capability.
  9. Where can I purchase the FDS86267P?
    The FDS86267P can be purchased from various distributors such as Avnet, Mouser, and element14.
  10. What are the benefits of using the PowerTrench process in the FDS86267P?
    The PowerTrench process reduces gate charge and improves switching performance, enhancing overall efficiency.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:255mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1130 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$1.77
554

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