Overview
The FDS6673BZ-G is a P-Channel MOSFET produced by onsemi, utilizing their advanced Power Trench process. This technology is specifically designed to minimize on-state resistance, making the device highly efficient for power management and load switching applications. The MOSFET is well-suited for use in notebook computers and portable battery packs due to its high performance and robust specifications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Current (Ta) | 14.5 A | A |
| Drain to Source Voltage (Vdss) | 30 V | V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 10 V | V |
| FET Type | P-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V | nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 15 V | pF |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55°C ~ 150°C (TJ) | °C |
| Package | 8-SOIC (0.154", 3.90mm Width) | |
| Power Dissipation (Max) | 1 W (Ta) | W |
| Rds On (Max) @ Id, Vgs | 7.8 mΩ @ 14.5 A, 10 V | mΩ |
| Vgs (Max) | ±25 V | V |
| Vgs(th) (Max) @ Id | 3 V @ 250 µA | V |
Key Features
- High performance trench technology for extremely low Rds(on)
- Extended Vgs range (-25 V) for battery applications
- HBM ESD protection level of 6.5 kV typical
- High power and current handling capability
- Pb-free, halide-free, and RoHS compliant
Applications
The FDS6673BZ-G is well-suited for power management and load switching applications, particularly in:
- Notebook computers
- Portable battery packs
Q & A
- What is the maximum drain to source voltage (Vdss) of the FDS6673BZ-G?
The maximum drain to source voltage (Vdss) is 30 V.
- What is the typical on-state resistance (Rds(on)) at Vgs = -10 V and Id = -14.5 A?
The typical on-state resistance (Rds(on)) is 7.8 mΩ.
- What is the operating temperature range of the FDS6673BZ-G?
The operating temperature range is -55°C to 150°C (TJ).
- What is the package type of the FDS6673BZ-G?
The package type is 8-SOIC with a width of 0.154" (3.90mm).
- Is the FDS6673BZ-G RoHS compliant?
- What is the maximum gate to source voltage (Vgs) for the FDS6673BZ-G?
The maximum gate to source voltage (Vgs) is ±25 V.
- What is the gate charge (Qg) at Vgs = 5 V?
The gate charge (Qg) at Vgs = 5 V is 65 nC.
- What are the typical applications for the FDS6673BZ-G?
The typical applications include power management and load switching in notebook computers and portable battery packs.
- What is the input capacitance (Ciss) at Vds = 15 V?
The input capacitance (Ciss) at Vds = 15 V is 4700 pF.
- What is the HBM ESD protection level of the FDS6673BZ-G?
The HBM ESD protection level is 6.5 kV typical.
