Overview
The FDS4465-PG is a P-Channel MOSFET from onsemi, utilizing the advanced PowerTrench® technology. This device is optimized for power management applications and is characterized by its low on-resistance and high current handling capabilities. It is designed to operate with a wide range of gate drive voltages from 1.8 V to 8 V, making it versatile for various power management needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | -20 | V |
| Gate-to-Source Voltage (VGSS) | ±8 | V |
| Continuous Drain Current (ID) | -13.5 | A |
| Pulsed Drain Current (ID) | -50 | A |
| Power Dissipation (PD) | 2.5 (Note 1a), 1.5 (Note 1b), 1.2 (Note 1c) | W |
| On-Resistance (RDS(on)) at VGS = -4.5 V | 8.5 mΩ | mΩ |
| On-Resistance (RDS(on)) at VGS = -2.5 V | 10.5 mΩ | mΩ |
| On-Resistance (RDS(on)) at VGS = -1.8 V | 14 mΩ | mΩ |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 50 °C/W (Note 1a), 125 °C/W (Note 1c) | °C/W |
| Operating and Storage Junction Temperature Range | -55 to +175 | °C |
| Package Style | SOIC-8 | |
| Mounting Method | Surface Mount |
Key Features
- High Performance Trench Technology for extremely low RDS(on)
- Fast Switching Speed
- High Current and Power Handling Capability
- Wide range of gate drive voltage (1.8 V – 8 V)
- Rugged gate version for enhanced reliability
- Low on-resistance: 8.5 mΩ at VGS = -4.5 V, 10.5 mΩ at VGS = -2.5 V, and 14 mΩ at VGS = -1.8 V
Applications
- Power Management
- Load Switch
- Battery Protection
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FDS4465?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What are the typical on-resistances (RDS(on)) at different gate voltages?
The on-resistances are 8.5 mΩ at VGS = -4.5 V, 10.5 mΩ at VGS = -2.5 V, and 14 mΩ at VGS = -1.8 V.
- What is the continuous drain current (ID) rating of the FDS4465?
The continuous drain current (ID) is -13.5 A.
- What is the thermal resistance, junction-to-ambient (RθJA), of the FDS4465?
The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W (Note 1a) and 125 °C/W (Note 1c).
- What are the typical applications of the FDS4465?
The FDS4465 is typically used in power management, load switch, and battery protection applications.
- What is the package style and mounting method of the FDS4465?
The package style is SOIC-8, and the mounting method is surface mount.
- What is the operating and storage junction temperature range of the FDS4465?
The operating and storage junction temperature range is -55 to +175 °C.
- What are the key features of the PowerTrench technology used in the FDS4465?
The PowerTrench technology provides high performance with extremely low RDS(on), fast switching speed, and high current and power handling capability.
- What is the gate charge (Qg) of the FDS4465?
The total gate charge (Qg) is 120 nC.
- What are the switching characteristics of the FDS4465?
The switching characteristics include turn-on delay time (td(on)) of 20-36 ns, turn-on rise time (tr) of 24-38 ns, turn-off delay time (td(off)) of 300-480 ns, and turn-off fall time (tf) of 140-224 ns.
