FDP083N15A-F102
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onsemi FDP083N15A-F102

Manufacturer No:
FDP083N15A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 150V 83A TO220-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FDP083N15A-F102 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is part of onsemi's advanced PowerTrench® MOSFET family, known for its high efficiency and thermal performance. Although the specific model FDP083N15A is currently discontinued, its specifications and features remain relevant for understanding the capabilities of similar MOSFETs in the PowerTrench® series.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 150 V
ID (Drain Current) 117 A
RDS(ON) (On-Resistance) 8.3 mΩ
PD (Power Dissipation) 294 W
Package TO220-3

Key Features

The FDP083N15A-F102 features advanced package and silicon combinations designed to achieve low on-resistance (RDS(ON)) and high efficiency. It also includes thermally efficient packages and next-generation enhanced body diode technology engineered for soft recovery, which helps in reducing switching losses and improving overall system performance.

Applications

This N-Channel MOSFET is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Automotive and industrial power management systems

Q & A

  1. What is the drain-source voltage (VDS) of the FDP083N15A-F102?

    150 V.

  2. What is the maximum drain current (ID) of this MOSFET?

    117 A.

  3. What is the on-resistance (RDS(ON)) of the FDP083N15A-F102?

    8.3 mΩ.

  4. What package type is used for the FDP083N15A-F102?

    TO220-3.

  5. Is the FDP083N15A-F102 still in production?

    No, it is currently discontinued.

  6. What are some key features of the FDP083N15A-F102?

    Advanced package and silicon combination, thermally efficient packages, and enhanced body diode technology for soft recovery.

  7. What are some typical applications for this MOSFET?

    Power supplies, motor control, high-frequency switching circuits, and automotive/industrial power management.

  8. What is the maximum power dissipation (PD) of the FDP083N15A-F102?

    294 W.

  9. Where can I find detailed specifications for the FDP083N15A-F102?

    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.

  10. What is the significance of the PowerTrench® technology in this MOSFET?

    PowerTrench® technology enhances the device's efficiency and thermal performance by reducing on-resistance and improving switching characteristics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6040 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):294W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Same Series
FDP083N15A
FDP083N15A
MOSFET N-CH 150V 83A TO220-3

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