Overview
The FDN360P-NBGT003B is a P-Channel Logic Level MOSFET produced by onsemi using their advanced PowerTrench process. This technology is specifically designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is particularly suited for low voltage and battery-powered applications where low in-line power loss and fast switching are essential.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | VGS = 0 V, ID = -250 µA | -30 | - | - | V |
| Gate-Source Voltage (VGSS) | - | - | ±20 | - | V |
| Continuous Drain Current (ID) | - | - | -2 | - | A |
| Pulsed Drain Current | - | - | -10 | - | A |
| On-State Resistance (RDS(ON)) @ VGS = -10 V | - | 80 | - | mΩ | |
| On-State Resistance (RDS(ON)) @ VGS = -4.5 V | - | 125 | - | mΩ | |
| Total Gate Charge (Qg) | VDS = -15 V, ID = -3.6 A, VGS = -10 V | - | 6.2 | 9 | nC |
| Input Capacitance (Ciss) | VDS = -15 V, VGS = 0 V, f = 1.0 MHz | - | 298 | - | pF |
| Output Capacitance (Coss) | - | - | 83 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 39 | - | pF |
| Turn-On Delay Time (td(on)) | VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | - | 6 | 12 | ns |
| Turn-On Rise Time (tr) | - | - | 13 | 23 | ns |
| Turn-Off Delay Time (td(off)) | - | - | 11 | 20 | ns |
| Turn-Off Fall Time (tf) | - | - | 6 | 12 | ns |
Key Features
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (6.2 nC typical) for superior switching performance
- High power version of industry standard SOT-23 package with 30% higher power handling capability
- Pb-Free and RoHS compliant package
- Low in-line power loss and fast switching capabilities
Applications
The FDN360P-NBGT003B is well suited for a variety of applications, including:
- Low voltage and battery-powered circuits
- General usage in many different applications where low power loss and fast switching are required
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDN360P-NBGT003B?
The maximum drain-source voltage (VDSS) is -30 V. - What is the typical on-state resistance (RDS(ON)) at VGS = -10 V?
The typical on-state resistance (RDS(ON)) at VGS = -10 V is 80 mΩ. - What is the maximum continuous drain current (ID)?
The maximum continuous drain current (ID) is -2 A. - What is the typical total gate charge (Qg)?
The typical total gate charge (Qg) is 6.2 nC. - Is the FDN360P-NBGT003B Pb-Free and RoHS compliant?
Yes, the FDN360P-NBGT003B is Pb-Free and RoHS compliant. - What is the package type of the FDN360P-NBGT003B?
The package type is SOT-23 with 30% higher power handling capability compared to standard SOT-23 packages. - What are the typical turn-on and turn-off times?
The typical turn-on delay time is 6-12 ns, and the typical turn-off delay time is 11-20 ns. - What are the input, output, and reverse transfer capacitances?
The input capacitance (Ciss) is 298 pF, the output capacitance (Coss) is 83 pF, and the reverse transfer capacitance (Crss) is 39 pF. - What is the operating junction temperature range?
The operating junction temperature range is -55°C to +150°C. - What is the thermal resistance, junction-to-ambient (RθJA)?
The thermal resistance, junction-to-ambient (RθJA), is 250°C/W.
