FDN359BN
  • Share:

onsemi FDN359BN

Manufacturer No:
FDN359BN
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 2.7A SUPERSOT3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDN359BN is an N-Channel Logic Level PowerTrench MOSFET manufactured by onsemi. This small signal MOSFET is designed for low-voltage applications and is known for its high performance and reliability. Although the product has been discontinued by Fairchild Semiconductor, it is still available through various distributors and resellers.

Key Specifications

ParameterValue
Voltage Rating (Vds)30 V
Current Rating (Id)2.7 A
On-Resistance (Rds(on))46 mΩ @ 10 V, 2.7 A
Threshold Voltage (Vth)3 V @ 250 μA
Package TypeSOT-23
Power Dissipation (Pd)500 mW
ComplianceROHS

Key Features

  • Low on-resistance (Rds(on)) for efficient switching
  • Logic level gate drive for easy interface with microcontrollers and other logic circuits
  • Compact SOT-23 package for space-saving designs
  • High current capability of up to 2.7 A
  • Low threshold voltage for low-voltage applications

Applications

  • Low-voltage power switching and control
  • Portable electronics and battery-powered devices
  • Automotive and industrial control systems
  • Audio and video equipment
  • General-purpose switching and amplification

Q & A

  1. What is the voltage rating of the FDN359BN MOSFET?
    The voltage rating (Vds) of the FDN359BN is 30 V.
  2. What is the current rating of the FDN359BN MOSFET?
    The current rating (Id) of the FDN359BN is 2.7 A.
  3. What is the on-resistance (Rds(on)) of the FDN359BN?
    The on-resistance (Rds(on)) of the FDN359BN is 46 mΩ @ 10 V, 2.7 A.
  4. What is the threshold voltage (Vth) of the FDN359BN?
    The threshold voltage (Vth) of the FDN359BN is 3 V @ 250 μA.
  5. What package type does the FDN359BN come in?
    The FDN359BN comes in a SOT-23 package.
  6. Is the FDN359BN ROHS compliant?
    Yes, the FDN359BN is ROHS compliant.
  7. What are some common applications of the FDN359BN?
    The FDN359BN is commonly used in low-voltage power switching, portable electronics, automotive and industrial control systems, and general-purpose switching and amplification.
  8. Why is the FDN359BN suitable for low-voltage applications?
    The FDN359BN is suitable for low-voltage applications due to its low threshold voltage and logic level gate drive.
  9. Can the FDN359BN be used in high-power applications?
    No, the FDN359BN is not suitable for high-power applications due to its limited power dissipation of 500 mW.
  10. Is the FDN359BN still available for purchase despite being discontinued by Fairchild Semiconductor?
    Yes, the FDN359BN is still available through various distributors and resellers.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.57
682

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDN359BN FDN359AN
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 2.7A, 10V 46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 5 V 7 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V 480 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE