Overview
The FDN359AN is an N-Channel Logic Level MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This MOSFET is designed for low voltage and battery-powered applications, offering low in-line power loss and fast switching capabilities. It is packaged in a surface mount SOT-23-3 configuration, making it suitable for a variety of compact electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 30 V |
| Continuous Drain Current (Id) | 2.7 A (Ta) |
| Power Dissipation (Pd) | 500 mW (Ta) |
| On-Resistance (Rds(on)) | 46 mΩ |
| Package Type | SOT-23-3 |
Key Features
- Logic Level Gate Drive: Compatible with low voltage logic signals.
- Low On-Resistance: 46 mΩ, reducing power losses.
- Fast Switching: Ideal for applications requiring quick switching times.
- Compact SOT-23-3 Package: Suitable for space-constrained designs.
- Low In-Line Power Loss: Efficient for battery-powered and low voltage applications.
Applications
The FDN359AN is well-suited for a range of applications, including low voltage and battery-powered devices. It is particularly useful in designs where fast switching and low power loss are critical, such as in mobile electronics, power management circuits, and other compact electronic systems.
Q & A
- What is the voltage rating of the FDN359AN MOSFET? The voltage rating (Vds) of the FDN359AN is 30 V.
- What is the continuous drain current of the FDN359AN? The continuous drain current (Id) is 2.7 A at ambient temperature (Ta).
- What is the power dissipation of the FDN359AN? The power dissipation (Pd) is 500 mW at ambient temperature (Ta).
- What is the on-resistance of the FDN359AN? The on-resistance (Rds(on)) is 46 mΩ.
- In what package is the FDN359AN available? The FDN359AN is available in a SOT-23-3 surface mount package.
- What are the key features of the FDN359AN? Key features include logic level gate drive, low on-resistance, fast switching, and a compact package.
- What types of applications is the FDN359AN suited for? The FDN359AN is suited for low voltage and battery-powered applications, including mobile electronics and power management circuits.
- Why is the FDN359AN preferred in battery-powered devices? It is preferred due to its low in-line power loss and fast switching capabilities.
- What process is used to manufacture the FDN359AN? The FDN359AN is manufactured using onsemi's advanced POWERTRENCH process.
- Is the FDN359AN compatible with low voltage logic signals? Yes, it is compatible with low voltage logic signals due to its logic level gate drive.
