FDMS86550ET60
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onsemi FDMS86550ET60

Manufacturer No:
FDMS86550ET60
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 32A/245A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86550ET60 is a high-performance N-Channel PowerTrench® MOSFET manufactured by onsemi. This device is designed to offer superior electrical characteristics, making it suitable for a wide range of power management applications. With its high current rating and low on-resistance, the FDMS86550ET60 is ideal for systems requiring high efficiency and reliability.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id)245 A
On-Resistance (Rds(on))1.65 mΩ
Gate Charge (Qg)110 nC
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
Power Dissipation (Pd)156 W

Key Features

  • High current capability of 245 A, making it suitable for high-power applications.
  • Low on-resistance of 1.65 mΩ, which reduces power losses and increases efficiency.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environmental conditions.
  • High gate charge of 110 nC, which supports robust gate drive requirements.
  • PowerTrench® technology for improved thermal performance and reduced thermal resistance.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power systems, such as welding equipment and power tools.
  • Renewable energy systems, including solar and wind power inverters.

Q & A

  1. What is the voltage rating of the FDMS86550ET60 MOSFET?
    The voltage rating of the FDMS86550ET60 MOSFET is 60 V.
  2. What is the continuous drain current of the FDMS86550ET60?
    The continuous drain current of the FDMS86550ET60 is 245 A.
  3. What is the on-resistance of the FDMS86550ET60?
    The on-resistance of the FDMS86550ET60 is 1.65 mΩ.
  4. What is the gate charge of the FDMS86550ET60?
    The gate charge of the FDMS86550ET60 is 110 nC.
  5. What is the operating temperature range of the FDMS86550ET60?
    The operating temperature range of the FDMS86550ET60 is from -55°C to 150°C.
  6. What is the power dissipation of the FDMS86550ET60?
    The power dissipation of the FDMS86550ET60 is 156 W.
  7. What technology is used in the FDMS86550ET60 MOSFET?
    The FDMS86550ET60 MOSFET uses PowerTrench® technology.
  8. What are some common applications of the FDMS86550ET60?
    The FDMS86550ET60 is commonly used in power supplies, motor control systems, automotive systems, industrial power systems, and renewable energy systems.
  9. Where can I find detailed specifications for the FDMS86550ET60?
    Detailed specifications for the FDMS86550ET60 can be found on the onsemi official website, as well as on distributor websites like Mouser Electronics.
  10. Is the FDMS86550ET60 suitable for high-power applications?
    Yes, the FDMS86550ET60 is highly suitable for high-power applications due to its high current rating and low on-resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 245A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:1.65mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:154 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8235 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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