FDMS86150ET100
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onsemi FDMS86150ET100

Manufacturer No:
FDMS86150ET100
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 16A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86150ET100 is an N-Channel Shielded Gate PowerTrench® MOSFET produced by onsemi. This device is fabricated using an advanced PowerTrench® process that optimizes on-state resistance while maintaining superior switching performance. It features a robust PQFN-8 package design, making it suitable for high-efficiency applications. The MOSFET is RoHS compliant and has a maximum junction temperature rating of 175°C, enhancing its reliability and durability in various power management systems.

Key Specifications

ParameterValue
V(BR)DSS Min (V)100
RDS(on) Max @ VGS = 10 V (mΩ)4.85
VGS (V)±20
VGS(th) Max (V)4
ID Max (A)128
PD Max (W)187
Package TypePQFN-8
MSL TypeMSL1
MSL Temp (°C)260
Container TypeREEL
Container Qty.3000

Key Features

  • Advanced PowerTrench® process for low on-state resistance and high efficiency.
  • Shielded Gate MOSFET Technology for improved performance.
  • Robust PQFN-8 package design with MSL1 rating.
  • 100% UIL tested for reliability.
  • RoHS compliant.
  • Extended junction temperature rating to 175°C.

Applications

The FDMS86150ET100 is suitable for various high-efficiency power management applications, including:

  • DC-DC power supplies.
  • Merchant power supplies.
  • Other high-power switching applications where low on-state resistance and superior switching performance are critical.

Q & A

  1. What is the maximum drain-to-source voltage (V(BR)DSS) of the FDMS86150ET100?
    The maximum drain-to-source voltage (V(BR)DSS) is 100V.
  2. What is the maximum on-state resistance (RDS(on)) at VGS = 10 V?
    The maximum on-state resistance (RDS(on)) at VGS = 10 V is 4.85 mΩ.
  3. What is the maximum drain current (ID) of the FDMS86150ET100?
    The maximum drain current (ID) is 128 A.
  4. What is the package type of the FDMS86150ET100?
    The package type is PQFN-8.
  5. Is the FDMS86150ET100 RoHS compliant?
    Yes, the FDMS86150ET100 is RoHS compliant.
  6. What is the maximum junction temperature rating of the FDMS86150ET100?
    The maximum junction temperature rating is 175°C.
  7. What are the typical applications of the FDMS86150ET100?
    The typical applications include DC-DC power supplies and other high-power switching applications.
  8. What is the MSL rating of the FDMS86150ET100?
    The MSL rating is MSL1.
  9. Is the FDMS86150ET100 100% UIL tested?
    Yes, the FDMS86150ET100 is 100% UIL tested.
  10. What is the container type and quantity for the FDMS86150ET100?
    The container type is REEL, and the container quantity is 3000.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4065 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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