Overview
The FDMS4D4N08C is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process with Shielded Gate technology. This device is designed to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode. It is packaged in a PQFN8 5x6 (CASE 483AE) and is RoHS compliant and MSL1 robust.
Key Specifications
| Parameter | Ratings | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 80 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current - Continuous at TC = 25°C) | 123 | A |
| ID (Drain Current - Continuous at TC = 100°C) | 78 | A |
| PD (Power Dissipation at TC = 25°C) | 125 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| rDS(on) (Static Drain to Source On Resistance at VGS = 10 V, ID = 44 A) | 4.3 | mΩ |
| rDS(on) (Static Drain to Source On Resistance at VGS = 6 V, ID = 22 A) | 10.4 | mΩ |
| RθJC (Thermal Resistance, Junction to Case) | 1.0 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 | °C/W |
Key Features
- Shielded Gate MOSFET Technology
- Low on-state resistance (rDS(on)) of 4.3 mΩ at VGS = 10 V, ID = 44 A and 10.4 mΩ at VGS = 6 V, ID = 22 A
- 50% lower Qrr (reverse recovery charge) compared to other MOSFET suppliers, reducing switching noise and EMI
- MSL1 robust package design
- 100% UIL tested
- RoHS compliant
Applications
- Primary DC-DC MOSFET
- Synchronous Rectifier in DC-DC and AC-DC converters
- Motor Drive
- Solar Power applications
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS4D4N08C?
The maximum drain to source voltage (VDS) is 80 V.
- What is the maximum continuous drain current at 25°C and 100°C?
The maximum continuous drain current is 123 A at 25°C and 78 A at 100°C.
- What is the thermal resistance from junction to case (RθJC) and junction to ambient (RθJA)?
The thermal resistance from junction to case (RθJC) is 1.0 °C/W, and from junction to ambient (RθJA) is 50 °C/W.
- What are the key features of the FDMS4D4N08C MOSFET?
The key features include Shielded Gate MOSFET Technology, low on-state resistance, 50% lower Qrr, MSL1 robust package design, 100% UIL tested, and RoHS compliance.
- What are the typical applications of the FDMS4D4N08C?
Typical applications include primary DC-DC MOSFET, synchronous rectifier in DC-DC and AC-DC converters, motor drive, and solar power applications.
- What is the package type and dimensions of the FDMS4D4N08C?
The package type is PQFN8 5x6 (CASE 483AE).
- Is the FDMS4D4N08C RoHS compliant?
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 125 W.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 2.0 to 4.0 V.
- What is the reverse recovery charge (Qrr) of the FDMS4D4N08C?
The reverse recovery charge (Qrr) is 44 to 71 nC.
