FDMS003N08C
  • Share:

onsemi FDMS003N08C

Manufacturer No:
FDMS003N08C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 22A/147A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS003N08C is a high-performance N-Channel MOSFET produced by onsemi. This device is part of onsemi's low to medium voltage MOSFET family and is fabricated using the advanced PowerTrench process, which incorporates Shielded Gate technology. This technology enhances the device's switching performance and reduces on-resistance, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 92 A
Idm - Peak Drain Current 658 A
Power Dissipation 125 W

Key Features

  • Advanced PowerTrench process with Shielded Gate technology for improved switching performance and reduced on-resistance.
  • High continuous drain current of 92 A and peak drain current of 658 A, making it suitable for high-power applications.
  • Drain-source breakdown voltage of 80 V, providing robust voltage handling capabilities.
  • High power dissipation of 125 W, enabling efficient heat management in demanding environments).

Applications

The FDMS003N08C is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-power switching circuits
  • Automotive and industrial power systems

Q & A

  1. What is the transistor polarity of the FDMS003N08C? The transistor polarity is N-Channel.
  2. What is the continuous drain current of the FDMS003N08C? The continuous drain current is 92 A).
  3. What is the peak drain current of the FDMS003N08C? The peak drain current is 658 A).
  4. What is the drain-source breakdown voltage of the FDMS003N08C? The drain-source breakdown voltage is 80 V).
  5. What is the power dissipation of the FDMS003N08C? The power dissipation is 125 W).
  6. What technology is used in the fabrication of the FDMS003N08C? The FDMS003N08C is fabricated using onsemi's advanced PowerTrench process with Shielded Gate technology).
  7. What are some typical applications of the FDMS003N08C? Typical applications include power supplies, motor control systems, high-power switching circuits, and automotive and industrial power systems.
  8. What is the maximum voltage the FDMS003N08C can handle? The FDMS003N08C can handle a maximum drain-source voltage of 80 V).
  9. Is the FDMS003N08C suitable for high-power applications? Yes, the FDMS003N08C is suitable for high-power applications due to its high continuous and peak drain currents and high power dissipation capabilities).
  10. Where can I find detailed specifications for the FDMS003N08C? Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser and TME).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5350 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.97
93

Please send RFQ , we will respond immediately.

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN