FDMS003N08C
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onsemi FDMS003N08C

Manufacturer No:
FDMS003N08C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 22A/147A POWER56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS003N08C is a high-performance N-Channel MOSFET produced by onsemi. This device is part of onsemi's low to medium voltage MOSFET family and is fabricated using the advanced PowerTrench process, which incorporates Shielded Gate technology. This technology enhances the device's switching performance and reduces on-resistance, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 92 A
Idm - Peak Drain Current 658 A
Power Dissipation 125 W

Key Features

  • Advanced PowerTrench process with Shielded Gate technology for improved switching performance and reduced on-resistance.
  • High continuous drain current of 92 A and peak drain current of 658 A, making it suitable for high-power applications.
  • Drain-source breakdown voltage of 80 V, providing robust voltage handling capabilities.
  • High power dissipation of 125 W, enabling efficient heat management in demanding environments).

Applications

The FDMS003N08C is designed for use in various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-power switching circuits
  • Automotive and industrial power systems

Q & A

  1. What is the transistor polarity of the FDMS003N08C? The transistor polarity is N-Channel.
  2. What is the continuous drain current of the FDMS003N08C? The continuous drain current is 92 A).
  3. What is the peak drain current of the FDMS003N08C? The peak drain current is 658 A).
  4. What is the drain-source breakdown voltage of the FDMS003N08C? The drain-source breakdown voltage is 80 V).
  5. What is the power dissipation of the FDMS003N08C? The power dissipation is 125 W).
  6. What technology is used in the fabrication of the FDMS003N08C? The FDMS003N08C is fabricated using onsemi's advanced PowerTrench process with Shielded Gate technology).
  7. What are some typical applications of the FDMS003N08C? Typical applications include power supplies, motor control systems, high-power switching circuits, and automotive and industrial power systems.
  8. What is the maximum voltage the FDMS003N08C can handle? The FDMS003N08C can handle a maximum drain-source voltage of 80 V).
  9. Is the FDMS003N08C suitable for high-power applications? Yes, the FDMS003N08C is suitable for high-power applications due to its high continuous and peak drain currents and high power dissipation capabilities).
  10. Where can I find detailed specifications for the FDMS003N08C? Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Mouser and TME).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5350 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.7W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power56
Package / Case:8-PowerTDFN
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