FDMC8327L-L701
  • Share:

onsemi FDMC8327L-L701

Manufacturer No:
FDMC8327L-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
FET 40V 9.7 MOHM MLP33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8327L is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi's advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. The MOSFET is suitable for high-power applications requiring low profile and high efficiency.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS (Drain to Source Voltage) - - - 40 V
VGS (Gate to Source Voltage) - - - ±20 V
ID (Drain Current) - Continuous (Package Limited) TC = 25°C - - 14 A
ID (Drain Current) - Continuous (Silicon Limited) TC = 25°C - - 12 A
RDS(on) (Static Drain to Source On Resistance) VGS = 10 V, ID = 12 A - 7.4 9.7
RDS(on) (Static Drain to Source On Resistance) VGS = 4.5 V, ID = 10 A - 9.4 12.5
TJ, TSTG (Operating and Storage Junction Temperature Range) - -55 - 150 °C
PD (Power Dissipation) at TC = 25°C - - - 30 W
PD (Power Dissipation) at TA = 25°C - - - 2.3 W

Key Features

  • Max RDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
  • Max RDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
  • Low Profile - 0.8 mm max in Power 33 package
  • 100% UIL test
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

The FDMC8327L is suitable for various high-power applications, including:

  • DC-DC Conversion
  • Power Management Systems
  • High-Efficiency Switching Circuits
  • Automotive and Industrial Power Systems

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC8327L?

    The maximum drain to source voltage (VDS) is 40 V.

  2. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 14 A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 12 A?

    The typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 12 A is 7.4 mΩ.

  4. Is the FDMC8327L RoHS compliant?

    Yes, the FDMC8327L is Pb-Free, Halide Free, and RoHS Compliant.

  5. What is the operating and storage junction temperature range for the FDMC8327L?

    The operating and storage junction temperature range is -55°C to 150°C.

  6. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation at TC = 25°C is 30 W.

  7. What package type is the FDMC8327L available in?

    The FDMC8327L is available in a WDFN8 3.3x3.3, 0.65P package.

  8. What are some typical applications for the FDMC8327L?

    Typical applications include DC-DC conversion, power management systems, high-efficiency switching circuits, and automotive and industrial power systems.

  9. What is the turn-on delay time (td(on)) for the FDMC8327L?

    The turn-on delay time (td(on)) is typically 8.4 ns to 17 ns.

  10. What is the total gate charge (Qg(TOT)) for the FDMC8327L?

    The total gate charge (Qg(TOT)) is typically 18.5 nC to 26 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$0.62
722

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB