FDMC8327L
  • Share:

onsemi FDMC8327L

Manufacturer No:
FDMC8327L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 12A/14A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8327L is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed using onsemi’s advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. The FDMC8327L is suitable for high-power applications requiring low on-state resistance and fast switching times.

Key Specifications

Parameter Test Conditions Min Typ Max Unit
VDS (Drain to Source Voltage) ID = 250 μA, VGS = 0 V - - 40 V
VGS (Gate to Source Voltage) - - - ±20 V
ID (Drain Current) - - - 14 A
RDS(on) (Static Drain to Source On Resistance) VGS = 10 V, ID = 12 A - 7.4 9.7
RDS(on) (Static Drain to Source On Resistance) VGS = 4.5 V, ID = 10 A - 9.4 12.5
VGS(th) (Gate to Source Threshold Voltage) VGS = VDS, ID = 250 μA 1.0 1.7 3.0 V
Ciss (Input Capacitance) VDS = 20 V, VGS = 0 V, f = 1 MHz - - 1850 pF
Coss (Output Capacitance) - - - 520 pF
Crss (Reverse Transfer Capacitance) - - - 35 pF

Key Features

  • Max RDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
  • Max RDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
  • Low Profile - 0.8 mm max in Power 33 package
  • 100% UIL test
  • Pb-Free, Halide Free, and RoHS Compliant

Applications

The FDMC8327L is suitable for various high-power applications, including:

  • DC-DC Conversion
  • Power Management Systems
  • Motor Control and Drive Systems
  • High-Current Switching Applications

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC8327L?

    The maximum drain to source voltage (VDS) is 40 V.

  2. What is the maximum drain current (ID) of the FDMC8327L?

    The maximum drain current (ID) is 14 A.

  3. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 12 A?

    The typical on-state resistance (RDS(on)) is 7.4 mΩ.

  4. Is the FDMC8327L RoHS compliant?
  5. What is the gate to source threshold voltage (VGS(th)) range?

    The gate to source threshold voltage (VGS(th)) range is from 1.0 V to 3.0 V.

  6. What is the input capacitance (Ciss) of the FDMC8327L?

    The input capacitance (Ciss) is up to 1850 pF.

  7. What are the typical applications of the FDMC8327L?

    The FDMC8327L is typically used in DC-DC conversion, power management systems, motor control and drive systems, and high-current switching applications.

  8. What is the package type of the FDMC8327L?

    The package type is WDFN8 3.3x3.3, 0.65P.

  9. What is the maximum junction temperature of the FDMC8327L?

    The maximum junction temperature is 150°C.

  10. Does the FDMC8327L undergo any specific testing?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.50
223

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC8327L FDMC8321L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 14A (Tc) 22A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 12A, 10V 2.5mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 20 V 3900 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 30W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) Power33
Package / Case 8-PowerWDFN 8-PowerTDFN

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP