FDMC8321L
  • Share:

onsemi FDMC8321L

Manufacturer No:
FDMC8321L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 22A/49A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8321L is an N-Channel MOSFET designed by onsemi, utilizing their advanced POWERTRENCH technology. This device is optimized for low gate charge, low RDS(on), and fast switching speeds, making it ideal for improving the overall efficiency and minimizing switch mode ringing in DC/DC converters. It is suitable for both synchronous and conventional switching PWM controllers.

Key Specifications

Symbol Parameter Rating Unit
VDS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
ID Drain Current (Continuous) 49 A (TC = 25°C), 22 A (TA = 25°C) A
ID Drain Current (Pulsed) 100 A A
PD Power Dissipation (TC = 25°C) 40 W W
PD Power Dissipation (TA = 25°C) 2.3 W W
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
RDS(on) Static Drain to Source On–Resistance 2.5 mΩ at VGS = 10 V, ID = 22 A; 4.1 mΩ at VGS = 4.5 V, ID = 18 A
VGS(th) Gate to Source Threshold Voltage 1.0 to 3.0 V V

Key Features

  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
  • 100% UIL Tested
  • Pb−Free, Halide Free and RoHS Compliant
  • Optimized for low gate charge and fast switching speed

Applications

  • Synchronous Rectifier
  • Load Switch/Orring
  • Motor Switch
  • Primary DC/DC Switch

Q & A

  1. What is the maximum drain to source voltage of the FDMC8321L MOSFET?

    The maximum drain to source voltage (VDS) is 40 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 49 A for TC and 22 A for TA.

  3. What is the typical RDS(on) at VGS = 10 V and ID = 22 A?

    The typical RDS(on) at VGS = 10 V and ID = 22 A is 2.5 mΩ.

  4. Is the FDMC8321L MOSFET RoHS compliant?
  5. What are the operating and storage junction temperature ranges?

    The operating and storage junction temperature ranges are −55 to +150°C.

  6. What is the gate to source threshold voltage range?

    The gate to source threshold voltage (VGS(th)) range is 1.0 to 3.0 V.

  7. What are some typical applications of the FDMC8321L MOSFET?

    Typical applications include synchronous rectifier, load switch/orring, motor switch, and primary DC/DC switch.

  8. What is the thermal resistance from junction to ambient (RJA) when mounted on a specific pad?

    The thermal resistance from junction to ambient (RJA) is 53°C/W when mounted on a 1 in^2 pad of 2 oz copper.

  9. What is the total gate charge at VGS = 10 V and ID = 22 A?

    The total gate charge at VGS = 10 V and ID = 22 A is 44 to 61 nC.

  10. What is the reverse recovery time of the body diode?

    The reverse recovery time (trr) of the body diode is 41 to 65 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$2.54
42

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMC8321L FDMC8327L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 49A (Tc) 12A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 22A, 10V 9.7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 20 V 1850 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 8-MLP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerWDFN

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5