FDMC8321L
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onsemi FDMC8321L

Manufacturer No:
FDMC8321L
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 22A/49A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC8321L is an N-Channel MOSFET designed by onsemi, utilizing their advanced POWERTRENCH technology. This device is optimized for low gate charge, low RDS(on), and fast switching speeds, making it ideal for improving the overall efficiency and minimizing switch mode ringing in DC/DC converters. It is suitable for both synchronous and conventional switching PWM controllers.

Key Specifications

Symbol Parameter Rating Unit
VDS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
ID Drain Current (Continuous) 49 A (TC = 25°C), 22 A (TA = 25°C) A
ID Drain Current (Pulsed) 100 A A
PD Power Dissipation (TC = 25°C) 40 W W
PD Power Dissipation (TA = 25°C) 2.3 W W
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
RDS(on) Static Drain to Source On–Resistance 2.5 mΩ at VGS = 10 V, ID = 22 A; 4.1 mΩ at VGS = 4.5 V, ID = 18 A
VGS(th) Gate to Source Threshold Voltage 1.0 to 3.0 V V

Key Features

  • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency
  • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
  • 100% UIL Tested
  • Pb−Free, Halide Free and RoHS Compliant
  • Optimized for low gate charge and fast switching speed

Applications

  • Synchronous Rectifier
  • Load Switch/Orring
  • Motor Switch
  • Primary DC/DC Switch

Q & A

  1. What is the maximum drain to source voltage of the FDMC8321L MOSFET?

    The maximum drain to source voltage (VDS) is 40 V.

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 49 A for TC and 22 A for TA.

  3. What is the typical RDS(on) at VGS = 10 V and ID = 22 A?

    The typical RDS(on) at VGS = 10 V and ID = 22 A is 2.5 mΩ.

  4. Is the FDMC8321L MOSFET RoHS compliant?
  5. What are the operating and storage junction temperature ranges?

    The operating and storage junction temperature ranges are −55 to +150°C.

  6. What is the gate to source threshold voltage range?

    The gate to source threshold voltage (VGS(th)) range is 1.0 to 3.0 V.

  7. What are some typical applications of the FDMC8321L MOSFET?

    Typical applications include synchronous rectifier, load switch/orring, motor switch, and primary DC/DC switch.

  8. What is the thermal resistance from junction to ambient (RJA) when mounted on a specific pad?

    The thermal resistance from junction to ambient (RJA) is 53°C/W when mounted on a 1 in^2 pad of 2 oz copper.

  9. What is the total gate charge at VGS = 10 V and ID = 22 A?

    The total gate charge at VGS = 10 V and ID = 22 A is 44 to 61 nC.

  10. What is the reverse recovery time of the body diode?

    The reverse recovery time (trr) of the body diode is 41 to 65 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerTDFN
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Similar Products

Part Number FDMC8321L FDMC8327L
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 49A (Tc) 12A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 22A, 10V 9.7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 20 V 1850 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 8-MLP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerWDFN

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