FDMC7678-L701
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onsemi FDMC7678-L701

Manufacturer No:
FDMC7678-L701
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
PT8 N 30/20V MLP3.3X3.3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMC7678-L701 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH® process. This device is designed to minimize on-state resistance, making it highly suitable for power management and load switching applications. It is particularly well-suited for use in notebook computers and portable battery packs due to its high performance and low resistance characteristics.

Key Specifications

Parameter Ratings Unit
Drain to Source Voltage (VDS) 30 V
Gate to Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 17.5 A
Continuous Drain Current (ID) at TA = 25°C 19.5 A
Pulsed Drain Current (ID) 70 A
Power Dissipation (PD) at TC = 25°C 31 W
Power Dissipation (PD) at TA = 25°C 2.3 W
Operating and Storage Junction Temperature Range (TJ, TSTG) -55 to +150 °C
Static Drain to Source On Resistance (rDS(on)) at VGS = 10 V, ID = 17.5 A 5.3 mΩ
Static Drain to Source On Resistance (rDS(on)) at VGS = 4.5 V, ID = 15.0 A 6.8 mΩ
Gate to Source Threshold Voltage (VGS(th)) 1.2 to 3.0 V
Input Capacitance (Ciss) 2410 pF pF
Package/Case 8-PowerWDFN (3.3x3.3, 0.65P)

Key Features

  • High performance technology for extremely low rDS(on), with a maximum rDS(on) of 5.3 mΩ at VGS = 10 V and ID = 17.5 A, and 6.8 mΩ at VGS = 4.5 V and ID = 15.0 A.
  • Pb-Free, Halide Free, and RoHS compliant.
  • Low on-state resistance and high current handling capabilities.
  • Surface mount package (8-MLP, 3.3x3.3 mm) for compact and efficient design.
  • Wide operating and storage junction temperature range (-55°C to +150°C).

Applications

  • DC-DC Buck Converters.
  • Notebook Battery Power Management.
  • Load Switch in Notebook Computers.
  • Portable Battery Packs.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMC7678-L701?

    The maximum drain to source voltage (VDS) is 30 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 17.5 A.

  3. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 31 W.

  4. What is the operating and storage junction temperature range (TJ, TSTG)?

    The operating and storage junction temperature range (TJ, TSTG) is -55°C to +150°C.

  5. Is the FDMC7678-L701 Pb-Free and RoHS compliant?

    Yes, the FDMC7678-L701 is Pb-Free, Halide Free, and RoHS compliant.

  6. What are the typical applications of the FDMC7678-L701?

    Typical applications include DC-DC Buck Converters, Notebook Battery Power Management, Load Switch in Notebook Computers, and Portable Battery Packs.

  7. What is the package type of the FDMC7678-L701?

    The package type is 8-PowerWDFN (3.3x3.3 mm, 0.65P).

  8. What is the maximum static drain to source on resistance (rDS(on)) at VGS = 10 V and ID = 17.5 A?

    The maximum static drain to source on resistance (rDS(on)) at VGS = 10 V and ID = 17.5 A is 5.3 mΩ.

  9. What is the gate to source threshold voltage (VGS(th)) range?

    The gate to source threshold voltage (VGS(th)) range is 1.2 to 3.0 V.

  10. What is the input capacitance (Ciss) of the FDMC7678-L701?

    The input capacitance (Ciss) is 2410 pF at VDS = 15 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2410 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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