Overview
The FDMC510P is a P-Channel PowerTrench® MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This MOSFET is optimized for low on-resistance (rDS(on)), high switching performance, and ruggedness. It is designed to handle high power and current in a widely used surface mount package, making it suitable for various high-performance applications.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | -20 | V |
| Gate to Source Voltage (VGS) | ±8 | V |
| Continuous Drain Current (ID) at TC = 25°C | -18 | A |
| Pulsed Drain Current (ID) | -50 | A |
| Power Dissipation (PD) at TC = 25°C | 41 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 3 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
| On-State Resistance (rDS(on)) at VGS = -4.5 V, ID = -12 A | 8.0 mΩ | mΩ |
Key Features
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package (MLP 3.3x3.3)
- 100% UIL tested
- HBM ESD capability level >2 kV typical
- Pb-free, halide-free, and RoHS compliant
Applications
- Battery Management
- Load Switch
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC510P MOSFET?
The maximum drain to source voltage (VDS) is -20 V. - What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is -18 A. - What is the typical on-state resistance (rDS(on)) at VGS = -4.5 V and ID = -12 A?
The typical on-state resistance (rDS(on)) at VGS = -4.5 V and ID = -12 A is 8.0 mΩ. - What are the thermal resistance values for junction to case (RθJC) and junction to ambient (RθJA)?
The thermal resistance, junction to case (RθJC), is 3 °C/W, and the thermal resistance, junction to ambient (RθJA), is 53 °C/W. - Is the FDMC510P MOSFET RoHS compliant?
Yes, the FDMC510P MOSFET is Pb-free, halide-free, and RoHS compliant. - What are the typical applications of the FDMC510P MOSFET?
The FDMC510P MOSFET is typically used in battery management and load switch applications. - What is the maximum gate to source voltage (VGS) rating?
The maximum gate to source voltage (VGS) rating is ±8 V. - What is the single pulse avalanche energy (EAS) rating?
The single pulse avalanche energy (EAS) rating is 37 mJ. - What is the package type of the FDMC510P MOSFET?
The package type is MLP 3.3x3.3 (WDFN8 3.3x3.3, 0.65P). - Does the FDMC510P MOSFET have ESD protection?
Yes, it has an HBM ESD capability level >2 kV typical.
