Overview
The FDMC3612 is an N-Channel Power Trench® MOSFET produced by onsemi, utilizing their advanced Power Trench process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for a wide range of applications due to its robust electrical characteristics and compact design.
Key Specifications
| Parameter | Rating/Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 100 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 12 | A |
| Pulsed Drain Current (ID) at TA = 25°C | 15 | A |
| Power Dissipation (PD) at TC = 25°C | 35 | W |
| On-State Resistance (rDS(on)) at VGS = 10 V, ID = 3.3 A | 110 | mΩ |
| On-State Resistance (rDS(on)) at VGS = 6 V, ID = 3.0 A | 122 | mΩ |
| Thermal Resistance, Junction to Case (RθJC) | 3.5 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 53 | °C/W |
| Gate to Source Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V |
| Forward Transconductance (gFS) | 13 | S |
| Input Capacitance (Ciss) | 662 - 880 | pF |
| Output Capacitance (Coss) | 40 - 55 | pF |
| Reverse Transfer Capacitance (Crss) | 23 - 35 | pF |
| Gate Charge (Qg(TOT)) at VGS = 0 V to 10 V | 14.4 - 21 | nC |
Key Features
- Advanced Power Trench® process to minimize on-state resistance and enhance switching performance.
- Low profile design with a maximum height of 1 mm.
- 100% UIL tested for reliability.
- Pb-free and RoHS compliant.
- Enhanced channel structure for improved thermal and electrical performance.
Applications
- DC-DC conversion.
- PSE (Power over Ethernet) switches.
- General power switching applications.
- High-efficiency power management systems.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC3612 MOSFET?
The maximum drain to source voltage (VDS) is 100 V.
- What is the continuous drain current (ID) rating at TC = 25°C?
The continuous drain current (ID) rating at TC = 25°C is 12 A.
- What is the on-state resistance (rDS(on)) at VGS = 10 V and ID = 3.3 A?
The on-state resistance (rDS(on)) at VGS = 10 V and ID = 3.3 A is 110 mΩ.
- Is the FDMC3612 MOSFET RoHS compliant?
Yes, the FDMC3612 MOSFET is RoHS compliant and Pb-free.
- What are the typical applications of the FDMC3612 MOSFET?
The FDMC3612 MOSFET is typically used in DC-DC conversion, PSE switches, and general power switching applications.
- What is the thermal resistance, junction to case (RθJC), of the FDMC3612?
The thermal resistance, junction to case (RθJC), is 3.5 °C/W.
- What is the gate to source threshold voltage (VGS(th)) range?
The gate to source threshold voltage (VGS(th)) range is 2.0 to 4.0 V.
- What is the input capacitance (Ciss) range of the FDMC3612?
The input capacitance (Ciss) range is 662 to 880 pF.
- What is the total gate charge (Qg(TOT)) at VGS = 0 V to 10 V?
The total gate charge (Qg(TOT)) at VGS = 0 V to 10 V is 14.4 to 21 nC.
- What is the package type of the FDMC3612 MOSFET?
The package type is WDFN8 with dimensions 3.3x3.3 mm and a height of 0.65 mm.
