FDD6637-F085
  • Share:

onsemi FDD6637-F085

Manufacturer No:
FDD6637-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 35V 13A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD6637-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The FDD6637-F085 is part of the FDD6637 series, known for its robust and reliable operation in various power management scenarios.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)35 V
ID (Continuous Drain Current at Ta)13 A
ID (Continuous Drain Current at Tc)55 A
RDS(on) (On-Resistance)Typically 10 mΩ at VGS = 10 V
PD (Power Dissipation at Ta)3.1 W
PD (Power Dissipation at Tc)57 W
PackageTO-252AA (DPAK)

Key Features

  • Low On-Resistance: The FDD6637-F085 features a low RDS(on) of typically 10 mΩ at VGS = 10 V, making it suitable for high-efficiency power management applications.
  • High Current Handling: With a continuous drain current of up to 13 A at ambient temperature and 55 A at case temperature, this MOSFET is ideal for applications requiring high current capability.
  • PowerTrench Technology: onsemi's PowerTrench technology enhances the device's performance by reducing on-resistance and improving thermal characteristics.
  • Surface Mount Package: The TO-252AA (DPAK) package is convenient for surface mount applications, offering a compact footprint and ease of integration.

Applications

The FDD6637-F085 is suitable for a variety of applications, including but not limited to:

  • DC-DC Converters: High-efficiency power conversion in switch-mode power supplies.
  • Power Management: Battery management, power distribution, and voltage regulation in electronic systems.
  • Motor Control: Driving motors in automotive, industrial, and consumer electronics.
  • Audio Amplifiers: High-power audio amplifiers requiring low distortion and high efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FDD6637-F085? The maximum drain-source voltage (VDS) is 35 V.
  2. What is the continuous drain current at ambient temperature? The continuous drain current at ambient temperature (ID) is 13 A.
  3. What is the typical on-resistance of the FDD6637-F085? The typical on-resistance (RDS(on)) is 10 mΩ at VGS = 10 V.
  4. What package type does the FDD6637-F085 use? The FDD6637-F085 uses the TO-252AA (DPAK) surface mount package.
  5. What technology is used in the FDD6637-F085? The FDD6637-F085 uses onsemi's PowerTrench technology.
  6. What are some common applications for the FDD6637-F085? Common applications include DC-DC converters, power management, motor control, and audio amplifiers.
  7. Is the FDD6637-F085 still in production? The FDD6637-F085 is listed as obsolete, indicating it is no longer in active production.
  8. Where can I find detailed specifications for the FDD6637-F085? Detailed specifications can be found in the datasheet available on onsemi's official website and through distributors like Digi-Key and Mouser.
  9. What is the power dissipation at case temperature? The power dissipation at case temperature (PD) is 57 W.
  10. How does the PowerTrench technology benefit the FDD6637-F085? The PowerTrench technology reduces on-resistance and improves thermal characteristics, enhancing the overall performance of the MOSFET.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):35 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
188

Please send RFQ , we will respond immediately.

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5