FDD6637-F085
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onsemi FDD6637-F085

Manufacturer No:
FDD6637-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 35V 13A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDD6637-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The FDD6637-F085 is part of the FDD6637 series, known for its robust and reliable operation in various power management scenarios.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)35 V
ID (Continuous Drain Current at Ta)13 A
ID (Continuous Drain Current at Tc)55 A
RDS(on) (On-Resistance)Typically 10 mΩ at VGS = 10 V
PD (Power Dissipation at Ta)3.1 W
PD (Power Dissipation at Tc)57 W
PackageTO-252AA (DPAK)

Key Features

  • Low On-Resistance: The FDD6637-F085 features a low RDS(on) of typically 10 mΩ at VGS = 10 V, making it suitable for high-efficiency power management applications.
  • High Current Handling: With a continuous drain current of up to 13 A at ambient temperature and 55 A at case temperature, this MOSFET is ideal for applications requiring high current capability.
  • PowerTrench Technology: onsemi's PowerTrench technology enhances the device's performance by reducing on-resistance and improving thermal characteristics.
  • Surface Mount Package: The TO-252AA (DPAK) package is convenient for surface mount applications, offering a compact footprint and ease of integration.

Applications

The FDD6637-F085 is suitable for a variety of applications, including but not limited to:

  • DC-DC Converters: High-efficiency power conversion in switch-mode power supplies.
  • Power Management: Battery management, power distribution, and voltage regulation in electronic systems.
  • Motor Control: Driving motors in automotive, industrial, and consumer electronics.
  • Audio Amplifiers: High-power audio amplifiers requiring low distortion and high efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FDD6637-F085? The maximum drain-source voltage (VDS) is 35 V.
  2. What is the continuous drain current at ambient temperature? The continuous drain current at ambient temperature (ID) is 13 A.
  3. What is the typical on-resistance of the FDD6637-F085? The typical on-resistance (RDS(on)) is 10 mΩ at VGS = 10 V.
  4. What package type does the FDD6637-F085 use? The FDD6637-F085 uses the TO-252AA (DPAK) surface mount package.
  5. What technology is used in the FDD6637-F085? The FDD6637-F085 uses onsemi's PowerTrench technology.
  6. What are some common applications for the FDD6637-F085? Common applications include DC-DC converters, power management, motor control, and audio amplifiers.
  7. Is the FDD6637-F085 still in production? The FDD6637-F085 is listed as obsolete, indicating it is no longer in active production.
  8. Where can I find detailed specifications for the FDD6637-F085? Detailed specifications can be found in the datasheet available on onsemi's official website and through distributors like Digi-Key and Mouser.
  9. What is the power dissipation at case temperature? The power dissipation at case temperature (PD) is 57 W.
  10. How does the PowerTrench technology benefit the FDD6637-F085? The PowerTrench technology reduces on-resistance and improves thermal characteristics, enhancing the overall performance of the MOSFET.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):35 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:11.6mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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