Overview
The FDD4685 is a P-Channel PowerTrench® MOSFET designed and manufactured by onsemi. This component is part of onsemi’s extensive portfolio of power management solutions, known for their innovation and reliability in the semiconductor industry. The FDD4685 is particularly notable for its high performance and efficiency, making it suitable for a variety of applications, especially in the automotive and industrial sectors. It operates within a wide temperature range and adheres to RoHS compliance, ensuring it meets regulatory standards for hazardous substances.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | P | - |
| Maximum Continuous Drain Current | 8.4 | A |
| Maximum Drain Source Voltage | 40 | V |
| Package Type | DPAK (TO-252) | - |
| Mounting Type | Surface Mount | - |
| Pin Count | 3 | - |
| Maximum Drain Source Resistance | 42 | mΩ |
| Channel Mode | Enhancement | - |
| Minimum Gate Threshold Voltage | 1 | V |
| Maximum Power Dissipation | 69 | W |
| Maximum Gate Source Voltage | -20 V, +20 V | V |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
| Length | 6.73mm | mm |
| Width | 6.22mm | mm |
| Height | 2.39mm | mm |
| Typical Gate Charge @ Vgs | 19 nC @ 5 V | nC @ V |
Key Features
- High Current Capability: The FDD4685 can handle a maximum continuous drain current of 8.4 A and a pulsed drain current maximum of 100 A, making it suitable for high-power applications.
- Low On-Resistance: With a maximum drain source resistance of 42 mΩ, this MOSFET minimizes energy losses and enhances efficiency.
- Wide Operating Temperature Range: The component operates efficiently across a temperature range from -55 °C to +150 °C, ensuring reliability in various environmental conditions.
- RoHS Compliance: The FDD4685 adheres to RoHS standards, ensuring it meets regulatory requirements for hazardous substances.
- Compact Packaging: The DPAK (TO-252) package is ideal for surface mount technology, offering a compact form factor without compromising performance.
- Avalanche Energy Rating: The MOSFET has an avalanche energy rating (Eas) of 121 mJ, indicating its robustness against transient conditions.
Applications
- Automotive Systems: The FDD4685 is well-suited for automotive applications due to its high reliability, robustness, and adherence to automotive safety and quality standards.
- Industrial Power Management: Its high current capability and low on-resistance make it an excellent choice for industrial power management systems, including motor control and power supplies.
- Consumer Electronics: The component can be used in various consumer electronics where high efficiency and reliability are crucial, such as in power adapters and battery chargers.
Q & A
- What is the maximum continuous drain current of the FDD4685?
The maximum continuous drain current of the FDD4685 is 8.4 A.
- What is the maximum drain source voltage of the FDD4685?
The maximum drain source voltage of the FDD4685 is 40 V.
- What is the package type of the FDD4685?
The FDD4685 is packaged in a DPAK (TO-252) package.
- Is the FDD4685 RoHS compliant?
Yes, the FDD4685 is RoHS compliant.
- What is the operating temperature range of the FDD4685?
The FDD4685 operates within a temperature range from -55 °C to +150 °C.
- What is the typical gate charge of the FDD4685 at Vgs = 5 V?
The typical gate charge of the FDD4685 at Vgs = 5 V is 19 nC.
- What is the maximum power dissipation of the FDD4685?
The maximum power dissipation of the FDD4685 is 69 W.
- What is the minimum gate threshold voltage of the FDD4685?
The minimum gate threshold voltage of the FDD4685 is 1 V.
- Can the FDD4685 handle high pulsed currents?
Yes, the FDD4685 can handle a pulsed drain current maximum of 100 A.
- What is the avalanche energy rating of the FDD4685?
The avalanche energy rating (Eas) of the FDD4685 is 121 mJ.
