Overview
The FDD4141-F085 is a P-Channel MOSFET produced by onsemi, utilizing their proprietary POWERTRENCH technology. This device is designed to offer low RDS(on) and optimized BVDSS capability, making it suitable for applications requiring high performance and efficient power handling. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, aligning with environmental regulations.
Key Specifications
| Parameter | Symbol | Typical Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDS | -40 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | -50 A (Package limited), -58 A (Silicon limited) | A |
| Static Drain to Source On Resistance (VGS = -10 V, ID = -12.7 A) | RDS(on) | 12.3 mΩ | mΩ |
| Static Drain to Source On Resistance (VGS = -4.5 V, ID = -10.4 A) | RDS(on) | 18.0 mΩ | mΩ |
| Gate to Source Threshold Voltage | VGS(th) | -1.8 V | V |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to +175 °C | °C |
| Maximum Thermal Resistance, Junction to Case | RθJC | 1.8 °C/W | °C/W |
| Maximum Thermal Resistance, Junction to Ambient | RθJA | 52 °C/W | °C/W |
Key Features
- High Performance Trench Technology for extremely low RDS(on)
- AEC-Q101 Qualified and PPAP Capable for automotive reliability
- Pb-free and RoHS compliant for environmental compliance
- Low power dissipation losses in converter/inverter applications
- Optimized switching performance
Applications
- Inverter applications
- Power supplies
Q & A
- What is the typical RDS(on) of the FDD4141-F085 MOSFET?
The typical RDS(on) is 12.3 mΩ at VGS = -10 V, ID = -12.7 A, and 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A.
- What are the maximum ratings for VDS and VGS?
The maximum ratings are VDS = -40 V and VGS = ±20 V.
- Is the FDD4141-F085 AEC-Q101 qualified?
Yes, the FDD4141-F085 is AEC-Q101 qualified and PPAP capable.
- What is the operating and storage junction temperature range?
The operating and storage junction temperature range is -55 to +175 °C.
- What are the typical applications for the FDD4141-F085?
The typical applications include inverter and power supply applications.
- Is the FDD4141-F085 Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the maximum thermal resistance, junction to case?
The maximum thermal resistance, junction to case (RθJC), is 1.8 °C/W.
- What is the gate to source threshold voltage?
The gate to source threshold voltage (VGS(th)) is typically -1.8 V.
- What is the maximum continuous drain current?
The maximum continuous drain current (ID) is -50 A (package limited) and -58 A (silicon limited) at TC = 25°C.
- What is the single pulse avalanche energy rating?
The single pulse avalanche energy (EAS) is 337 mJ.
