Overview
The FDD4141-F085 is a P-Channel MOSFET produced by onsemi, utilizing their proprietary POWERTRENCH technology. This device is designed to offer low RDS(on) and optimized BVDSS capability, making it suitable for applications requiring high performance and efficient switching. The MOSFET is AEC-Q101 qualified and RoHS compliant, ensuring reliability and environmental sustainability.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS (Drain to Source Voltage) | - | -40 | V |
| VGS (Gate to Source Voltage) | - | ±20 | V |
| ID (Drain Current) - Continuous | TC = 25°C | -50 | A |
| ID (Drain Current) - Pulsed | - | -100 | A |
| RDS(on) at VGS = -10 V, ID = -12.7 A | - | 12.3 | mΩ |
| RDS(on) at VGS = -4.5 V, ID = -10.4 A | - | 18.0 | mΩ |
| EAS (Single Pulse Avalanche Energy) | - | 337 | mJ |
| PD (Power Dissipation) at TC = 25°C | - | 69 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | -55 to +175 | °C |
| RθJC (Thermal Resistance, Junction to Case) | - | 1.8 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | - | 52 | °C/W |
Key Features
- High performance trench technology for extremely low RDS(on)
- AEC-Q101 qualified and PPAP capable
- Pb-free and RoHS compliant
- Optimized switching performance reducing power dissipation losses in converter/inverter applications
- Low typical RDS(on) of 12.3 mΩ at VGS = -10 V, ID = -12.7 A and 18.0 mΩ at VGS = -4.5 V, ID = -10.4 A
Applications
- Inverter applications
- Power supplies
Q & A
- What is the maximum drain to source voltage (VDS) for the FDD4141-F085 MOSFET? The maximum VDS is -40 V.
- What is the typical RDS(on) at VGS = -10 V and ID = -12.7 A? The typical RDS(on) is 12.3 mΩ.
- Is the FDD4141-F085 MOSFET RoHS compliant? Yes, it is RoHS compliant.
- What are the operating and storage junction temperature ranges for the FDD4141-F085? The operating and storage junction temperature ranges are -55 to +175 °C.
- What is the maximum continuous drain current (ID) at TC = 25°C? The maximum continuous drain current is -50 A.
- What is the single pulse avalanche energy (EAS) for the FDD4141-F085? The single pulse avalanche energy is 337 mJ.
- What is the thermal resistance (RθJC) from junction to case? The thermal resistance from junction to case is 1.8 °C/W.
- What are the typical turn-on and turn-off delay times? The typical turn-on delay time is 10 ns, and the typical turn-off delay time is 38 ns.
- What is the gate to source threshold voltage (VGS(th))? The gate to source threshold voltage is typically -1.8 V.
- What is the forward transconductance (gFS) at VDS = -5 V and ID = -12.7 A? The forward transconductance is typically 38 S.
