FDD24AN06LA0-F085
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onsemi FDD24AN06LA0-F085

Manufacturer No:
FDD24AN06LA0-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.1A/40A TO252AA
Delivery:
Payment:
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Product Introduction

Overview

The FDD24AN06LA0-F085 is an N-Channel Logic Level PowerTrench MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling capabilities. It features an enhancement mode channel and is qualified to the AEC-Q101 standard, making it suitable for automotive and other demanding environments.

Key Specifications

ParameterValue
Maximum Operating Temperature+175°C
Power Dissipation (Pd)75 W
Channel ModeEnhancement
QualificationAEC-Q101
Drain-Source Voltage (Vds)60 V
Continuous Drain Current (Id) at Ta7.1 A
Continuous Drain Current (Id) at Tc40 A
Package TypeTO-252AA (Surface Mount)

Key Features

  • Low On-Resistance: Ensures efficient power handling and minimal heat generation.
  • High Current Capability: Supports up to 40 A continuous drain current at Tc.
  • Logic Level Gate Drive: Compatible with standard logic level signals, simplifying circuit design.
  • AEC-Q101 Qualified: Suitable for automotive and other high-reliability applications.
  • PowerTrench Technology: Enhances performance by reducing on-resistance and improving thermal dissipation.

Applications

  • Automotive Systems: Ideal for use in automotive power management, motor control, and other high-reliability applications.
  • Power Supplies: Suitable for switch-mode power supplies, DC-DC converters, and other power management circuits.
  • Motor Control: Used in motor drive circuits, including brushless DC motors and stepper motors.
  • Industrial Control: Applied in industrial automation, robotics, and other high-power control systems.

Q & A

  1. What is the maximum operating temperature of the FDD24AN06LA0-F085?
    The maximum operating temperature is +175°C.
  2. What is the power dissipation (Pd) of this MOSFET?
    The power dissipation is 75 W.
  3. What type of channel does the FDD24AN06LA0-F085 have?
    The FDD24AN06LA0-F085 has an enhancement mode N-Channel.
  4. Is the FDD24AN06LA0-F085 qualified for automotive use?
    Yes, it is qualified to the AEC-Q101 standard.
  5. What is the drain-source voltage (Vds) rating of this MOSFET?
    The drain-source voltage rating is 60 V.
  6. What is the continuous drain current (Id) at ambient temperature (Ta)?
    The continuous drain current at Ta is 7.1 A.
  7. What is the continuous drain current (Id) at case temperature (Tc)?
    The continuous drain current at Tc is 40 A.
  8. What type of package does the FDD24AN06LA0-F085 use?
    The package type is TO-252AA (Surface Mount).
  9. Why is the PowerTrench technology important in this MOSFET?
    PowerTrench technology enhances performance by reducing on-resistance and improving thermal dissipation.
  10. In what types of applications is the FDD24AN06LA0-F085 commonly used?
    It is commonly used in automotive systems, power supplies, motor control, and industrial control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD24AN06LA0-F085 FDD14AN06LA0-F085
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Ta), 40A (Tc) 9.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 40A, 10V 11.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 5 V 32 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V 2810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 75W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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