Overview
The FDC655BN is a single N-Channel Logic Level MOSFET produced by onsemi using their advanced PowerTrench process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are essential.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 30 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) | 6.3 | A |
| Pulsed Drain Current | 20 | A |
| Power Dissipation (PD) | 1.6 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient (RθJA) | 78 | °C/W |
| Static Drain to Source On Resistance (RDS(ON)) at VGS = 10 V, ID = 6.3 A | 25 mΩ | mΩ |
| Static Drain to Source On Resistance (RDS(ON)) at VGS = 4.5 V, ID = 5.5 A | 33 mΩ | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 1 to 3 | V |
| Total Gate Charge (Qg(Tot)) at VGS = 0 V to 10 V | 9 to 13 nC | nC |
Key Features
- Maximum RDS(ON) of 25 mΩ at VGS = 10 V, ID = 6.3 A and 33 mΩ at VGS = 4.5 V, ID = 5.5 A
- Fast switching capabilities
- Low gate charge
- High performance PowerTrench technology for extremely low RDS(ON)
- Pb-free, halide-free, and RoHS compliant
Applications
The FDC655BN is well-suited for low voltage and battery-powered applications where low in-line power loss and fast switching are required. These include but are not limited to:
- Portable electronics
- Battery-powered devices
- Power management circuits
- Switching power supplies
- Motor control and drive systems
Q & A
- What is the maximum drain to source voltage (VDS) of the FDC655BN MOSFET?
The maximum drain to source voltage (VDS) is 30 V.
- What is the continuous drain current (ID) rating of the FDC655BN?
The continuous drain current (ID) rating is 6.3 A.
- What is the thermal resistance, junction to ambient (RθJA), of the FDC655BN?
The thermal resistance, junction to ambient (RθJA), is 78 °C/W.
- What are the typical values for the static drain to source on resistance (RDS(ON))?
The typical values for RDS(ON) are 25 mΩ at VGS = 10 V, ID = 6.3 A and 33 mΩ at VGS = 4.5 V, ID = 5.5 A.
- Is the FDC655BN MOSFET RoHS compliant?
Yes, the FDC655BN is Pb-free, halide-free, and RoHS compliant.
- What is the gate to source threshold voltage (VGS(th)) range of the FDC655BN?
The gate to source threshold voltage (VGS(th)) range is from 1 to 3 V.
- What are the typical turn-on and turn-off delay times for the FDC655BN?
The typical turn-on delay time is 6 ns, and the typical turn-off delay time is 15 ns.
- What is the total gate charge (Qg(Tot)) for the FDC655BN?
The total gate charge (Qg(Tot)) is between 9 to 13 nC at VGS = 0 V to 10 V.
- What is the operating and storage junction temperature range for the FDC655BN?
The operating and storage junction temperature range is -55 to +150 °C.
- What package type is the FDC655BN available in?
The FDC655BN is available in a TSOT23-6 (SuperSOT-6) surface mount package.
