FDC653N
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onsemi FDC653N

Manufacturer No:
FDC653N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 5A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC653N is an N-Channel enhancement mode power field effect transistor produced by onsemi. It utilizes a proprietary, high cell density, DMOS technology, making it suitable for a variety of applications requiring high performance and reliability. This MOSFET is packaged in a SUPERSOT-6 package, which is compact and efficient for space-constrained designs.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)5 A
Drain-Source Resistance (Rds On)35 mΩ @ 10V, 5A
Gate-Source Threshold Voltage (Vgs)2 V @ 250 μA
Package TypeSUPERSOT-6

Key Features

  • N-Channel enhancement mode MOSFET
  • High cell density DMOS technology for improved performance
  • Compact SUPERSOT-6 package for space-efficient designs
  • Low drain-source resistance (Rds On) of 35 mΩ @ 10V, 5A
  • High continuous drain current of 5 A

Applications

The FDC653N is suitable for various applications including but not limited to:

  • Power switching and control circuits
  • DC-DC converters and power supplies
  • Motor control and drive circuits
  • Automotive and industrial electronics
  • General-purpose switching applications

Q & A

  1. What is the drain-source breakdown voltage of the FDC653N?
    The drain-source breakdown voltage (Vds) is 30 V.
  2. What is the continuous drain current rating of the FDC653N?
    The continuous drain current (Id) is 5 A.
  3. What is the typical drain-source resistance (Rds On) of the FDC653N?
    The typical drain-source resistance (Rds On) is 35 mΩ @ 10V, 5A.
  4. What is the gate-source threshold voltage of the FDC653N?
    The gate-source threshold voltage (Vgs) is 2 V @ 250 μA.
  5. In what package is the FDC653N available?
    The FDC653N is available in a SUPERSOT-6 package.
  6. What technology is used in the FDC653N?
    The FDC653N uses a proprietary, high cell density DMOS technology.
  7. What are some common applications for the FDC653N?
    Common applications include power switching and control circuits, DC-DC converters, motor control, automotive electronics, and general-purpose switching.
  8. Is the FDC653N RoHS compliant?
    Yes, the FDC653N is RoHS compliant.
  9. Where can I find detailed specifications for the FDC653N?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What is the typical operating temperature range for the FDC653N?
    The typical operating temperature range is not explicitly stated, but it generally follows standard semiconductor operating temperatures unless otherwise specified in the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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In Stock

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Similar Products

Part Number FDC653N FDC633N
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 10V 42mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 16 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V 538 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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