FDC637AN-NB5E023A
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onsemi FDC637AN-NB5E023A

Manufacturer No:
FDC637AN-NB5E023A
Manufacturer:
onsemi
Package:
Bulk
Description:
N-CHANNEL POWERTRENCH MOSFET, 2.
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC637AN-NB5E023A is a single N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed to operate in various applications requiring high efficiency and reliability. It is part of the ON Semiconductor product lineup, which has been integrated from the former Fairchild Semiconductor portfolio. The FDC637AN-NB5E023A is packaged in a SSOT-6 package, making it suitable for space-constrained designs while offering robust performance characteristics.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current)6.2 A
RDS(ON) (On-Resistance)Typically 15 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 1.5 V to 3.5 V
PackageSSOT-6

Key Features

  • Low On-Resistance (RDS(ON)) for high efficiency.
  • High continuous drain current (ID) of 6.2 A.
  • Compact SSOT-6 package for space-saving designs.
  • Wide range of applications due to its robust electrical characteristics.

Applications

The FDC637AN-NB5E023A MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDC637AN-NB5E023A?
    The maximum drain-source voltage is 20 V.
  2. What is the continuous drain current (ID) of this MOSFET?
    The continuous drain current is 6.2 A.
  3. What is the typical on-resistance (RDS(ON)) of the FDC637AN-NB5E023A?
    The typical on-resistance is 15 mΩ at VGS = 10 V.
  4. In what package is the FDC637AN-NB5E023A available?
    The FDC637AN-NB5E023A is available in a SSOT-6 package.
  5. What are some common applications for this MOSFET?
    Common applications include power management, DC-DC converters, motor control, and automotive and industrial control systems.
  6. Who is the manufacturer of the FDC637AN-NB5E023A?
    The manufacturer is ON Semiconductor.
  7. What is the threshold voltage (VGS(th)) range for this MOSFET?
    The threshold voltage range is typically 1.5 V to 3.5 V.
  8. Is the FDC637AN-NB5E023A an active product?
    Yes, it is an active product from ON Semiconductor.
  9. Where can I find detailed specifications and datasheets for the FDC637AN-NB5E023A?
    You can find detailed specifications and datasheets on the ON Semiconductor website or through authorized distributors like Mouser Electronics.
  10. What are the benefits of using the FDC637AN-NB5E023A in power management applications?
    The benefits include low on-resistance, high continuous drain current, and compact packaging, which contribute to high efficiency and reliability.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
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Supplier Device Package:- 
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