FDC5661N-F085
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onsemi FDC5661N-F085

Manufacturer No:
FDC5661N-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 4.3A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC5661N-F085 is an N-Channel Logic Level PowerTrench® MOSFET produced by onsemi. This device is characterized by its high performance and reliability, making it suitable for a variety of applications. It features a drain-to-source voltage (VDSS) of 60V, a continuous drain current (ID) of 4A, and an on-resistance (RDS(on)) of 60mΩ at VGS = 4.5V. The MOSFET is also qualified to AEC Q101 and is RoHS compliant, ensuring its use in automotive and other demanding environments.

Key Specifications

Parameter Symbol Value Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) ID 4 A
On-Resistance (VGS = 10V, ID = 4.3A) RDS(on) 47mΩ
On-Resistance (VGS = 4.5V, ID = 4A) RDS(on) 60mΩ
Total Gate Charge (VGS = 10V) Qg(TOT) 14.5nC nC
Package Type TSOT-23-6

Key Features

The FDC5661N-F085 boasts several key features that make it an attractive choice for various applications:

  • Low On-Resistance: With an RDS(on) of 60mΩ at VGS = 4.5V, this MOSFET minimizes power losses and enhances efficiency.
  • Low Miller Charge: The device has a low total gate charge, which is beneficial for high-frequency switching applications.
  • AEC Q101 Qualified: This qualification ensures the MOSFET meets stringent automotive standards, making it reliable for use in automotive systems.
  • RoHS Compliant: The FDC5661N-F085 is compliant with RoHS regulations, ensuring it is environmentally friendly and suitable for global markets.

Applications

The FDC5661N-F085 is versatile and can be used in a variety of applications, including:

  • Infotainment Systems: Suitable for use in automotive infotainment and navigation systems due to its reliability and performance.
  • Power Train and Safety Systems: Used in automotive power train and safety systems where high reliability and low on-resistance are critical.
  • Comfort and Convenience Systems: Applicable in body electronics and vehicle security systems where efficient power management is essential.
  • Other Automotive and Industrial Applications: Its robust specifications make it suitable for other automotive and industrial applications requiring high performance and reliability.

Q & A

  1. Q: What is the maximum drain-to-source voltage of the FDC5661N-F085?

    A: The maximum drain-to-source voltage (VDSS) is 60V.

  2. Q: What is the continuous drain current of the FDC5661N-F085 at VGS = 10V?

    A: The continuous drain current (ID) is 4A at VGS = 10V.

  3. Q: What is the on-resistance of the FDC5661N-F085 at VGS = 4.5V and ID = 4A?

    A: The on-resistance (RDS(on)) is 60mΩ at VGS = 4.5V and ID = 4A.

  4. Q: Is the FDC5661N-F085 qualified to AEC Q101?

    A: Yes, the FDC5661N-F085 is qualified to AEC Q101, making it suitable for automotive applications.

  5. Q: What is the package type of the FDC5661N-F085?

    A: The package type is TSOT-23-6.

  6. Q: What is the typical total gate charge of the FDC5661N-F085 at VGS = 10V?

    A: The typical total gate charge (Qg(TOT)) is 14.5nC at VGS = 10V.

  7. Q: Is the FDC5661N-F085 RoHS compliant?

    A: Yes, the FDC5661N-F085 is RoHS compliant.

  8. Q: What are some common applications of the FDC5661N-F085?

    A: Common applications include infotainment systems, power train and safety systems, comfort and convenience systems, and other automotive and industrial applications.

  9. Q: What is the maximum gate-to-source voltage of the FDC5661N-F085?

    A: The maximum gate-to-source voltage (VGS) is ±20V.

  10. Q: Where can I find more detailed specifications and resources for the FDC5661N-F085?

    A: Detailed specifications and resources can be found on the onsemi website and through official datasheets.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:47mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:763 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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