FDA69N25
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onsemi FDA69N25

Manufacturer No:
FDA69N25
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 250V 69A TO3PN
Delivery:
Payment:
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Product Introduction

Overview

The FDA69N25 is a high-performance N-Channel MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed for demanding applications requiring high current and voltage handling capabilities. It features a standard 40V gate level and is known for its leading on-resistance, making it particularly suitable for motor driver applications. The FDA69N25 also includes dual protection with temperature and current limiting, enhancing its reliability and safety in various operational conditions.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 250 V
Id (Continuous Drain Current at Tc=25°C) 69 A
Idm (Pulsed Drain Current) 276 A
Pd (Power Dissipation at Tc=25°C) 480 W
Rds(on) (On-Resistance at Vgs=10V, Id=69A) 41
Vgs(th) (Gate Threshold Voltage) 2-4 V
Package TO-3PN

Key Features

  • Dual Protection: The FDA69N25 includes temperature and current limiting, providing enhanced reliability and safety in various operational conditions.
  • Low On-Resistance: With an on-resistance of 41 mΩ at Vgs=10V and Id=69A, this MOSFET offers high efficiency in power management.
  • High Current and Voltage Handling: Capable of handling continuous drain currents up to 69A and drain-source voltages up to 250V.
  • Standard 40V Gate Level: Compatible with a wide range of gate drive circuits.
  • TO-3PN Package: A through-hole package suitable for high-power applications.

Applications

  • Motor Drivers: The FDA69N25 is particularly suited for motor driver applications due to its low on-resistance and high current handling capabilities.
  • Power Supplies: Ideal for use in high-power DC-DC converters and power supplies.
  • Industrial Control Systems: Suitable for use in industrial control systems that require high reliability and performance.
  • Automotive Systems: Can be used in various automotive applications requiring high power and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the FDA69N25?

    The maximum drain-source voltage (Vds) of the FDA69N25 is 250V.

  2. What is the continuous drain current rating of the FDA69N25 at Tc=25°C?

    The continuous drain current (Id) rating at Tc=25°C is 69A.

  3. What is the on-resistance of the FDA69N25 at Vgs=10V and Id=69A?

    The on-resistance (Rds(on)) at Vgs=10V and Id=69A is 41 mΩ.

  4. What type of package does the FDA69N25 come in?

    The FDA69N25 comes in a TO-3PN through-hole package.

  5. Does the FDA69N25 have any built-in protection features?

    Yes, the FDA69N25 includes dual protection with temperature and current limiting.

  6. What are some common applications for the FDA69N25?

    Common applications include motor drivers, power supplies, industrial control systems, and automotive systems.

  7. What is the maximum power dissipation of the FDA69N25 at Tc=25°C?

    The maximum power dissipation (Pd) at Tc=25°C is 480W.

  8. What is the gate threshold voltage range of the FDA69N25?

    The gate threshold voltage (Vgs(th)) range is 2-4V.

  9. Is the FDA69N25 suitable for high-power motor driver applications?

    Yes, it is particularly suited for high-power motor driver applications due to its low on-resistance and high current handling capabilities.

  10. Where can I find detailed specifications and datasheets for the FDA69N25?

    Detailed specifications and datasheets can be found on the official onsemi website, as well as on distributor websites such as Mouser, Digi-Key, and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 34.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FDA69N25 FDAF69N25 FDA59N25
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 69A (Tc) 34A (Tc) 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 34.5A, 10V 41mOhm @ 17A, 10V 49mOhm @ 29.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4640 pF @ 25 V 4640 pF @ 25 V 4020 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 480W (Tc) 115W (Tc) 392W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3PN TO-3PF TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3 Full Pack TO-3P-3, SC-65-3

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