FCMT250N65S3
  • Share:

onsemi FCMT250N65S3

Manufacturer No:
FCMT250N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 12A POWER88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT250N65S3 is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET® III family. This device is designed to offer high efficiency and reliability in various power management applications. With its robust construction and advanced features, it is well-suited for demanding environments such as power supplies, motor control, and high-power switching circuits.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 12 A
RDS(on) (On-Resistance) 250 mΩ
VGS(th) (Threshold Voltage) 2.0 - 4.0 V
PD (Power Dissipation) Dependent on package and thermal conditions
Package 4-Pin Power88

Key Features

  • High Voltage Capability: The FCMT250N65S3 can handle up to 650 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an RDS(on) of 250 mΩ, this MOSFET minimizes power losses and enhances efficiency.
  • High Current Rating: It can handle a continuous drain current of 12 A, supporting high-power applications.
  • Robust Construction: The Power88 package provides excellent thermal performance and mechanical robustness.
  • Advanced Switching Characteristics: Optimized for fast switching times and low EMI, making it ideal for high-frequency applications.

Applications

  • Power Supplies: Suitable for high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Used in motor drive circuits for industrial and automotive applications.
  • High-Power Switching Circuits: Ideal for applications requiring high switching frequencies and low power losses.
  • Electric Vehicles and Charging Systems: Can be used in the design of electric vehicle chargers and other high-power charging systems.

Q & A

  1. What is the maximum drain-source voltage of the FCMT250N65S3?

    The maximum drain-source voltage is 650 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 12 A.

  3. What is the on-resistance (RDS(on)) of the FCMT250N65S3?

    The on-resistance is 250 mΩ.

  4. In what package is the FCMT250N65S3 available?

    The FCMT250N65S3 is available in a 4-Pin Power88 package.

  5. What are some typical applications for this MOSFET?

    Typical applications include power supplies, motor control, high-power switching circuits, and electric vehicle charging systems.

  6. What are the key features of the FCMT250N65S3?

    Key features include high voltage capability, low on-resistance, high current rating, robust construction, and advanced switching characteristics.

  7. How does the FCMT250N65S3 contribute to efficiency in power supplies?

    It contributes to efficiency through its low on-resistance and high switching speed, minimizing power losses.

  8. Is the FCMT250N65S3 suitable for high-frequency applications?

    Yes, it is optimized for fast switching times and low EMI, making it suitable for high-frequency applications.

  9. What is the significance of the Power88 package for this MOSFET?

    The Power88 package provides excellent thermal performance and mechanical robustness, enhancing the overall reliability of the device.

  10. Can the FCMT250N65S3 be used in automotive applications?

    Yes, it can be used in automotive applications, particularly in motor control and other high-power switching circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power88
Package / Case:4-PowerTSFN
0 Remaining View Similar

In Stock

$1.26
185

Please send RFQ , we will respond immediately.

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR