FCMT250N65S3
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onsemi FCMT250N65S3

Manufacturer No:
FCMT250N65S3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 12A POWER88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCMT250N65S3 is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET® III family. This device is designed to offer high efficiency and reliability in various power management applications. With its robust construction and advanced features, it is well-suited for demanding environments such as power supplies, motor control, and high-power switching circuits.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
ID (Drain Current) 12 A
RDS(on) (On-Resistance) 250 mΩ
VGS(th) (Threshold Voltage) 2.0 - 4.0 V
PD (Power Dissipation) Dependent on package and thermal conditions
Package 4-Pin Power88

Key Features

  • High Voltage Capability: The FCMT250N65S3 can handle up to 650 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an RDS(on) of 250 mΩ, this MOSFET minimizes power losses and enhances efficiency.
  • High Current Rating: It can handle a continuous drain current of 12 A, supporting high-power applications.
  • Robust Construction: The Power88 package provides excellent thermal performance and mechanical robustness.
  • Advanced Switching Characteristics: Optimized for fast switching times and low EMI, making it ideal for high-frequency applications.

Applications

  • Power Supplies: Suitable for high-efficiency power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Used in motor drive circuits for industrial and automotive applications.
  • High-Power Switching Circuits: Ideal for applications requiring high switching frequencies and low power losses.
  • Electric Vehicles and Charging Systems: Can be used in the design of electric vehicle chargers and other high-power charging systems.

Q & A

  1. What is the maximum drain-source voltage of the FCMT250N65S3?

    The maximum drain-source voltage is 650 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current rating is 12 A.

  3. What is the on-resistance (RDS(on)) of the FCMT250N65S3?

    The on-resistance is 250 mΩ.

  4. In what package is the FCMT250N65S3 available?

    The FCMT250N65S3 is available in a 4-Pin Power88 package.

  5. What are some typical applications for this MOSFET?

    Typical applications include power supplies, motor control, high-power switching circuits, and electric vehicle charging systems.

  6. What are the key features of the FCMT250N65S3?

    Key features include high voltage capability, low on-resistance, high current rating, robust construction, and advanced switching characteristics.

  7. How does the FCMT250N65S3 contribute to efficiency in power supplies?

    It contributes to efficiency through its low on-resistance and high switching speed, minimizing power losses.

  8. Is the FCMT250N65S3 suitable for high-frequency applications?

    Yes, it is optimized for fast switching times and low EMI, making it suitable for high-frequency applications.

  9. What is the significance of the Power88 package for this MOSFET?

    The Power88 package provides excellent thermal performance and mechanical robustness, enhancing the overall reliability of the device.

  10. Can the FCMT250N65S3 be used in automotive applications?

    Yes, it can be used in automotive applications, particularly in motor control and other high-power switching circuits.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power88
Package / Case:4-PowerTSFN
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