Overview
The FCH072N60F is a high-voltage N-Channel MOSFET from onsemi, part of their SUPERFET II family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand high dv/dt rates and avalanche energy. This makes the FCH072N60F highly suitable for various switching power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 600 | V |
| Gate to Source Voltage (VGSS) | ±20 (DC), ±30 (AC, f > 1 Hz) | V |
| Continuous Drain Current (ID) at TC = 25°C | 52 | A |
| Continuous Drain Current (ID) at TC = 100°C | 33 | A |
| Pulsed Drain Current (IDM) | 156 | A |
| Single Pulsed Avalanche Energy (EAS) | 1128 | mJ |
| Avalanche Current (IAS) | 9.5 | A |
| Repetitive Avalanche Energy (EAR) | 4.8 | mJ |
| On-Resistance (RDS(on)) | 72 mΩ (Typ.) | mΩ |
| Gate Charge (Qg) | 165 nC (Typ.) | nC |
| Effective Output Capacitance (Coss(eff.)) | 441 pF (Typ.) | pF |
| Operating and Storage Temperature Range (TJ, TSTG) | −55 to +150 | °C |
| Maximum Lead Temperature for Soldering | 300 | °C |
Key Features
- 650 V rating at TJ = 150°C
- Typical on-resistance (RDS(on)) of 72 mΩ
- Ultra-low gate charge (Typ. Qg = 165 nC)
- Low effective output capacitance (Typ. Coss(eff.) = 441 pF)
- 100% avalanche tested
- Pb-free, halide-free, and RoHS compliant
- Optimized body diode reverse recovery performance to improve system reliability
Applications
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Electric Vehicle (EV) Chargers
- Uninterruptible Power Supplies (UPS) / Solar Power Systems
- FPD TV Power and ATX Power Supplies
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCH072N60F MOSFET?
The maximum drain to source voltage (VDSS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the FCH072N60F?
The typical on-resistance (RDS(on)) is 72 mΩ.
- What are the key features of the FCH072N60F MOSFET?
The key features include a 650 V rating, ultra-low gate charge, low effective output capacitance, and 100% avalanche testing. It is also Pb-free, halide-free, and RoHS compliant.
- What are the typical applications of the FCH072N60F MOSFET?
The typical applications include telecom/server power supplies, industrial power supplies, EV chargers, UPS/solar power systems, and FPD TV power and ATX power supplies.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 52 A.
- What is the thermal resistance, junction to case (RθJC), of the FCH072N60F?
The thermal resistance, junction to case (RθJC), is 0.26 °C/W.
- Is the FCH072N60F MOSFET RoHS compliant?
Yes, the FCH072N60F MOSFET is Pb-free, halide-free, and RoHS compliant.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- What is the typical gate charge (Qg) of the FCH072N60F MOSFET?
The typical gate charge (Qg) is 165 nC.
- What is the operating and storage temperature range of the FCH072N60F MOSFET?
The operating and storage temperature range is −55 to +150 °C.
