Overview
The FCH067N65S3-F155 is a high-performance N-channel MOSFET produced by onsemi. This device is part of the SUPERFET III series, known for its robust and reliable operation in various power management applications. The MOSFET features a maximum drain-source voltage (Vds) of 650V and a maximum continuous drain current (Id) of 44A, making it suitable for high-power applications. The device is packaged in a TO-247-3 configuration, which is widely used in industrial and automotive systems due to its excellent thermal dissipation characteristics.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Maximum Continuous Drain Current (Id) | 44 A |
| Maximum Drain Source Voltage (Vds) | 650 V |
| On-Resistance (Rds(on)) at Vgs = 10V | 67 mΩ |
| Threshold Voltage (Vth) | 4.5 V @ 1 mA |
| Package Type | TO-247-3 |
| Maximum Power Dissipation | 312 W |
| Maximum Drain Current (Idm) | 110 A |
Key Features
- High voltage and current handling capabilities, making it ideal for high-power applications.
- Low on-resistance (Rds(on)) of 67 mΩ at Vgs = 10V, reducing power losses and improving efficiency.
- Robust and reliable operation due to its SUPERFET III technology.
- TO-247-3 package for excellent thermal dissipation and ease of mounting.
- Compliant with RoHS standards, ensuring environmental sustainability.
Applications
The FCH067N65S3-F155 N-channel MOSFET is suitable for a variety of high-power applications, including:
- Industrial power supplies and converters.
- Automotive systems such as electric vehicles and hybrid vehicles.
- Renewable energy systems, including solar and wind power inverters.
- Motor control and drive systems.
- High-frequency switching applications.
Q & A
- What is the maximum continuous drain current of the FCH067N65S3-F155 MOSFET?
The maximum continuous drain current is 44 A. - What is the maximum drain-source voltage of the FCH067N65S3-F155 MOSFET?
The maximum drain-source voltage is 650 V. - What is the on-resistance (Rds(on)) of the FCH067N65S3-F155 MOSFET at Vgs = 10V?
The on-resistance is 67 mΩ at Vgs = 10V. - What is the package type of the FCH067N65S3-F155 MOSFET?
The package type is TO-247-3. - Is the FCH067N65S3-F155 MOSFET RoHS compliant?
Yes, the FCH067N65S3-F155 MOSFET is RoHS compliant. - What are some typical applications of the FCH067N65S3-F155 MOSFET?
Typical applications include industrial power supplies, automotive systems, renewable energy systems, motor control, and high-frequency switching applications. - What is the maximum power dissipation of the FCH067N65S3-F155 MOSFET?
The maximum power dissipation is 312 W. - What is the threshold voltage (Vth) of the FCH067N65S3-F155 MOSFET?
The threshold voltage is 4.5 V @ 1 mA. - What is the maximum drain current (Idm) of the FCH067N65S3-F155 MOSFET?
The maximum drain current is 110 A. - Which technology does the FCH067N65S3-F155 MOSFET use?
The FCH067N65S3-F155 MOSFET uses SUPERFET III technology.
