FCH023N65S3L4
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onsemi FCH023N65S3L4

Manufacturer No:
FCH023N65S3L4
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 650V 75A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH023N65S3L4 is a high-voltage N-Channel MOSFET from ON Semiconductor, part of their SUPERFET III family. This MOSFET utilizes charge balance technology, which enhances its performance by providing outstanding low on-resistance and high efficiency. It is designed for applications requiring high voltage and current handling capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
Current Rating (Id)75 A
On-Resistance (Rds(on))23 mΩ
Package TypeTO-247
Gate Threshold Voltage (Vgs(th))2-4 V
Maximum Junction Temperature (Tj)150°C

Key Features

  • Utilizes charge balance technology for low on-resistance and high efficiency.
  • High voltage rating of 650 V and high current rating of 75 A.
  • Low on-resistance of 23 mΩ.
  • TO-247 package for robust and reliable operation.
  • Easy drive characteristics due to optimized gate charge.

Applications

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Energy Storage Systems
  • Power Factor Correction (PFC)
  • Electric Vehicle Charging Stations

Q & A

  1. What is the voltage rating of the FCH023N65S3L4 MOSFET? The voltage rating is 650 V.
  2. What is the current rating of the FCH023N65S3L4 MOSFET? The current rating is 75 A.
  3. What is the on-resistance of the FCH023N65S3L4 MOSFET? The on-resistance is 23 mΩ.
  4. What package type is the FCH023N65S3L4 MOSFET available in? It is available in the TO-247 package.
  5. What is the gate threshold voltage of the FCH023N65S3L4 MOSFET? The gate threshold voltage is between 2-4 V.
  6. What are the typical applications of the FCH023N65S3L4 MOSFET? Typical applications include solar inverters, UPS, energy storage systems, PFC, and EV charging stations.
  7. What technology does the FCH023N65S3L4 MOSFET utilize? It utilizes charge balance technology.
  8. What is the maximum junction temperature of the FCH023N65S3L4 MOSFET? The maximum junction temperature is 150°C.
  9. Is the FCH023N65S3L4 MOSFET easy to drive? Yes, it has optimized gate charge for easy drive characteristics.
  10. Who is the manufacturer of the FCH023N65S3L4 MOSFET? The manufacturer is ON Semiconductor.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs:222 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7160 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):595W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-4
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