Overview
The FCH023N65S3-F155 is a high-performance N-Channel MOSFET from onsemi, part of their SUPERFET III family. This device is designed with advanced charge balance technology, offering outstanding low on-resistance and lower gate charge performance. It is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. The FCH023N65S3-F155 is ideal for applications requiring high power handling and efficient switching characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Maximum Continuous Drain Current (ID) | 75 | A |
| Maximum Pulsed Drain Current (IDM) | 300 | A |
| Static Drain to Source On Resistance (RDS(on)) | 19.5 mΩ (Typ.) | mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.5 - 4.5 | V |
| Total Gate Charge (Qg) | 222 nC (Typ.) | nC |
| Effective Output Capacitance (Coss(eff.)) | 1980 pF (Typ.) | pF |
| Thermal Resistance, Junction to Case (RθJC) | 0.21 °C/W | °C/W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to +150 °C | °C |
Key Features
- High voltage super-junction (SJ) MOSFET technology for low on-resistance and lower gate charge.
- Ultra-low gate charge (Typ. Qg = 222 nC) and low effective output capacitance (Typ. Coss(eff.) = 1980 pF).
- Superior switching performance and ability to withstand extreme dv/dt rates.
- 100% avalanche tested and Pb-free, RoHS compliant.
- Easier design implementation and reduced EMI issues due to the Easy Drive series.
Applications
- Telecom and server power supplies.
- Industrial power supplies.
- UPS (Uninterruptible Power Supplies) and solar power systems.
Q & A
- What is the maximum drain to source voltage of the FCH023N65S3-F155?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the maximum continuous drain current of this MOSFET?
The maximum continuous drain current (ID) is 75 A at TC = 25°C.
- What is the typical on-resistance of the FCH023N65S3-F155?
The typical static drain to source on-resistance (RDS(on)) is 19.5 mΩ at VGS = 10 V and ID = 37.5 A.
- What is the gate threshold voltage range of this MOSFET?
The gate threshold voltage (VGS(th)) range is from 2.5 V to 4.5 V.
- Is the FCH023N65S3-F155 Pb-free and RoHS compliant?
- What are the typical applications of the FCH023N65S3-F155?
Typical applications include telecom and server power supplies, industrial power supplies, and UPS/solar power systems.
- What is the thermal resistance from junction to case (RθJC) of this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.21 °C/W.
- What is the operating and storage temperature range for the FCH023N65S3-F155?
The operating and storage temperature range is from -55 °C to +150 °C.
- How does the FCH023N65S3-F155 handle extreme dv/dt rates?
The device is designed to withstand extreme dv/dt rates, providing superior switching performance.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C for 1/8″ from the case for 5 seconds.
