Overview
The FCD260N65S3 is a high-voltage super-junction (SJ) MOSFET from onsemi, part of their SUPERFET III family. This MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates. This makes it an ideal choice for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDSS) | 650 | V |
| Gate to Source Voltage (VGSS) | ±30 | V |
| Continuous Drain Current (ID) at TC = 25°C | 10 | A |
| Continuous Drain Current (ID) at TC = 100°C | 6 | A |
| Pulsed Drain Current (IDM) | 25 | A |
| Static Drain to Source On Resistance (RDS(on)) at VGS = 10 V, ID = 5 A | 260 mΩ | mΩ |
| Typical Gate Charge (Qg) at 10V | 18 nC | nC |
| Effective Output Capacitance (Coss(eff.)) | 173 pF | pF |
| Operating and Storage Temperature Range (TJ, TSTG) | −55 to +150 | °C |
Key Features
- Utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance.
- Superior switching performance and ability to withstand extreme dv/dt rates.
- Ultra-low gate charge (Typ. Qg = 18 nC).
- Low effective output capacitance (Typ. Coss(eff.) = 173 pF).
- 100% avalanche tested.
- Pb-free and RoHS compliant.
Applications
- Computing / Display Power Supplies
- Telecom / Server Power Supplies
- Industrial Power Supplies
- Lighting / Charger / Adapter
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCD260N65S3 MOSFET?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the FCD260N65S3 at VGS = 10 V and ID = 5 A?
The typical on-resistance (RDS(on)) is 260 mΩ.
- What is the typical gate charge (Qg) at 10V for the FCD260N65S3?
The typical gate charge (Qg) at 10V is 18 nC.
- Is the FCD260N65S3 Pb-free and RoHS compliant?
- What are the operating and storage temperature ranges for the FCD260N65S3?
The operating and storage temperature ranges are −55 to +150°C.
- What are some common applications for the FCD260N65S3 MOSFET?
Common applications include computing/display power supplies, telecom/server power supplies, industrial power supplies, and lighting/charger/adapters.
- How does the charge balance technology in the FCD260N65S3 improve its performance?
The charge balance technology minimizes conduction loss and provides superior switching performance by optimizing the charge distribution within the MOSFET.
- What is the maximum continuous drain current (ID) at TC = 25°C for the FCD260N65S3?
The maximum continuous drain current (ID) at TC = 25°C is 10 A.
- What is the maximum pulsed drain current (IDM) for the FCD260N65S3?
The maximum pulsed drain current (IDM) is 25 A.
- What is the effective output capacitance (Coss(eff.)) of the FCD260N65S3?
The effective output capacitance (Coss(eff.)) is 173 pF.
