ECH8315-TL-H
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onsemi ECH8315-TL-H

Manufacturer No:
ECH8315-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 7.5A 8ECH
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The ECH8315-TL-H is a power MOSFET produced by onsemi, utilizing their advanced trench technology to achieve low on-resistance. This P-Channel MOSFET is designed for applications requiring high efficiency and reliability. With a drain-to-source voltage rating of -30 V and a maximum drain current of -7.5 A, it is suitable for a variety of power management and switching applications. The device is also ESD diode-protected and is Pb-Free, Halogen Free, and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.

Key Specifications

ParameterSymbolValueUnit
Drain to Source VoltageVDSS-30V
Gate to Source VoltageVGSS±20V
Drain Current (DC)ID-7.5A
Drain Current (Pulse)IDP-40A
Power DissipationPD1.5W
Junction TemperatureTj150°C
Storage TemperatureTstg-55 to +150°C
Static Drain to Source On-State ResistanceRDS(on)25 mΩ @ -10 V
Gate Threshold VoltageVGS(th)-1.2 to -2.6V
Input CapacitanceCiss875pF

Key Features

  • Low On-Resistance: Achieved through onsemi's trench technology, making it suitable for applications requiring low on-resistance.
  • 4 V Drive: Allows for easy control with low gate voltage.
  • ESD Diode-Protected Gate: Enhances device reliability by protecting against electrostatic discharge.
  • Pb-Free, Halogen Free, and RoHS Compliant: Ensures environmental friendliness and compliance with regulatory standards.

Applications

  • Load Switch: Ideal for applications where high current switching is required.
  • Protection Switch for Lithium-ion Battery: Provides reliable protection for battery management systems.
  • Motor Driver: Suitable for motor control applications due to its high current handling capability.

Q & A

  1. What is the maximum drain-to-source voltage of the ECH8315-TL-H? The maximum drain-to-source voltage is -30 V.
  2. What is the maximum drain current for DC operation? The maximum drain current for DC operation is -7.5 A.
  3. What is the typical on-resistance of the ECH8315-TL-H? The typical on-resistance is 25 mΩ at a gate-to-source voltage of -10 V.
  4. Is the ECH8315-TL-H ESD protected? Yes, the gate is ESD diode-protected.
  5. What are the typical applications of the ECH8315-TL-H? Typical applications include load switching, protection switching for lithium-ion batteries, and motor drivers.
  6. What is the maximum junction temperature of the ECH8315-TL-H? The maximum junction temperature is 150°C.
  7. Is the ECH8315-TL-H RoHS compliant? Yes, it is Pb-Free, Halogen Free, and RoHS compliant.
  8. What is the input capacitance of the ECH8315-TL-H? The input capacitance is 875 pF.
  9. What is the power dissipation rating when mounted on a ceramic substrate? The power dissipation rating is 1.5 W when mounted on a ceramic substrate (900 mm² x 0.8 mm).
  10. What is the gate threshold voltage range of the ECH8315-TL-H? The gate threshold voltage range is -1.2 to -2.6 V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:875 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-ECH
Package / Case:8-SMD, Flat Lead
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Same Series
ECH8315-TL-W
ECH8315-TL-W
MOSFET P-CH 30V 7.5A SOT28FL

Similar Products

Part Number ECH8315-TL-H ECH8315-TL-W ECH8310-TL-H
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) 7.5A (Ta) 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 3.5A, 10V 25mOhm @ 3.5A, 10V 17mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id - 2.6V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 875 pF @ 10 V 875 pF @ 10 V 1400 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-ECH SOT-28FL/ECH8 8-ECH
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead

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