BSS138-F085
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onsemi BSS138-F085

Manufacturer No:
BSS138-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 220MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138-F085 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi. This transistor is fabricated using onsemi's proprietary high cell density DMOS technology, designed to offer low on-state resistance, rugged reliability, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Key Specifications

ParameterUnitMinTypMax
Drain-Source Voltage (VDSS)V--50
Gate-Source Voltage (VGSS)V-20-20
Continuous Drain Current (ID)A--0.22
Pulsed Drain Current (ID)A--0.88
Maximum Power Dissipation (PD)W--0.36
Operating and Storage Junction Temperature Range (TJ, TSTG)°C-55-150
Maximum Lead Temperature for Soldering Purposes (TL)°C--300
Gate Threshold Voltage (VGS(th))V0.81.31.5
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 V, ID = 0.22 AΩ0.7-3.5
Static Drain-Source On-Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.22 AΩ1.0-6.0

Key Features

  • Automotive Qualified
  • High cell density DMOS technology for low on-state resistance
  • Rugged and reliable performance
  • Fast switching characteristics
  • Compact industry standard SOT-23 surface mount package
  • Low voltage, low current operation suitable for small servo motor control and power MOSFET gate drivers

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications requiring low voltage and low current
  • Automotive electronics due to its automotive qualification

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the BSS138-F085? The maximum drain-source voltage (VDSS) is 50 V.
  2. What is the continuous drain current (ID) rating of the BSS138-F085? The continuous drain current (ID) rating is 0.22 A.
  3. What is the typical on-state resistance (RDS(on)) at VGS = 10 V and ID = 0.22 A? The typical on-state resistance (RDS(on)) is 3.5 Ω.
  4. What is the operating and storage junction temperature range (TJ, TSTG) for the BSS138-F085? The operating and storage junction temperature range is -55°C to 150°C.
  5. What package type is the BSS138-F085 available in? The BSS138-F085 is available in a compact industry standard SOT-23 surface mount package.
  6. Is the BSS138-F085 suitable for automotive applications? Yes, the BSS138-F085 is automotive qualified.
  7. What are some typical applications of the BSS138-F085? Typical applications include small servo motor control, power MOSFET gate drivers, and other switching applications requiring low voltage and low current.
  8. What is the maximum power dissipation (PD) of the BSS138-F085? The maximum power dissipation (PD) is 0.36 W.
  9. What is the gate threshold voltage (VGS(th)) range of the BSS138-F085? The gate threshold voltage (VGS(th)) range is 0.8 V to 1.5 V.
  10. How does the on-state resistance (RDS(on)) vary with temperature? The on-state resistance (RDS(on)) increases with temperature, as shown in the typical characteristics section of the datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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