Overview
The BS108G MOSFET, produced by onsemi, is a small signal N-Channel MOSFET designed for high voltage, high speed switching applications. It is particularly suited for use in line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interfaces, and high voltage display drivers. The device features a low drive requirement and inherent current sharing capability, making it ideal for applications requiring multiple devices in parallel.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 200 | Vdc |
| Gate-Source Voltage | VGS | ±20 | Vdc |
| Drain Current (Continuous) | ID | 250 | mAdc |
| Drain Current (Pulsed) | IDM | 500 | mAdc |
| Total Power Dissipation @ TA = 25°C | PD | 350 | mW |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Gate Threshold Voltage | VGS(th) | 0.5 to 1.5 | Vdc |
| Static Drain-to-Source On-Resistance | rDS(on) | 8 Ω @ VGS = 2.0 Vdc, ID = 50 mA | Ω |
| Input Capacitance | Ciss | 150 | pF |
| Output Capacitance | Coss | 30 | pF |
| Reverse Transfer Capacitance | Crss | 10 | pF |
| Turn-On Time | td(on) | 15 | ns |
| Turn-Off Time | td(off) | 15 | ns |
Key Features
- Low Drive Requirement, VGS = 3.0 V max
- Inherent Current Sharing Capability Permits Easy Paralleling of many Devices
- AEC Qualified
- PPAP Capable
- Pb-Free Packages are Available
Applications
The BS108G MOSFET is suitable for a variety of high voltage, high speed switching applications, including:
- Line drivers
- Relay drivers
- CMOS logic
- Microprocessor or TTL to high voltage interfaces
- High voltage display drivers
Q & A
- What is the maximum drain-source voltage of the BS108G MOSFET?
The maximum drain-source voltage (VDSS) is 200 Vdc. - What is the maximum gate-source voltage of the BS108G MOSFET?
The maximum gate-source voltage (VGS) is ±20 Vdc. - What is the continuous drain current of the BS108G MOSFET?
The continuous drain current (ID) is 250 mA. - What is the gate threshold voltage of the BS108G MOSFET?
The gate threshold voltage (VGS(th)) ranges from 0.5 to 1.5 Vdc. - What is the on-state resistance of the BS108G MOSFET?
The static drain-to-source on-resistance (rDS(on)) is approximately 8 Ω at VGS = 2.0 Vdc and ID = 50 mA. - What are the operating and storage temperature ranges for the BS108G MOSFET?
The operating and storage temperature range is from −55 to +150 °C. - Is the BS108G MOSFET Pb-Free?
- What are some typical applications for the BS108G MOSFET?
Typical applications include line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interfaces, and high voltage display drivers.- What is the package type of the BS108G MOSFET?
The package type is TO-92.- Is the BS108G MOSFET AEC qualified?
- What are some typical applications for the BS108G MOSFET?
