Overview
The BDX54CG is a high-performance Darlington transistor manufactured by onsemi. This device is part of the BDX54 series, which includes complementary silicon power transistors designed for general-purpose amplifier and low-speed switching applications. The BDX54CG is a PNP transistor, offering high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power management and control circuits.
Key Specifications
Characteristic | Symbol | Min | Max | Unit |
---|---|---|---|---|
Collector-Emitter Sustaining Voltage | VCEO(sus) | 100 | - | Vdc |
Collector Current - Continuous | IC | - | 8.0 | Adc |
Collector Current - Peak | IC | - | 12 | Adc |
Base Current | IB | - | 0.2 | Adc |
DC Current Gain | hFE | 750 | - | - |
Collector-Emitter Saturation Voltage | VCE(sat) | - | 2.0 | Vdc |
Base-Emitter Saturation Voltage | VBE(sat) | - | 2.5 | Vdc |
Total Device Dissipation @ TC = 25°C | PD | - | 65 | W |
Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | - | °C |
Key Features
- High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc, ensuring high amplification capabilities.
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc, reducing power losses in switching applications.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors: Enhances stability and simplifies circuit design.
- High Collector-Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min), providing robust performance under various operating conditions.
- Wide Operating Temperature Range: -65°C to +150°C, making it suitable for diverse environmental conditions.
Applications
- General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
- Low-Speed Switching: Ideal for applications requiring reliable switching performance at lower speeds.
- Power Management: Can be used in power supply circuits, motor control, and other power management applications.
- Automotive and Industrial Control Systems: Robust enough for use in automotive and industrial environments where reliability and performance are critical.
Q & A
- What is the maximum collector current of the BDX54CG transistor?
The maximum continuous collector current is 8.0 Adc, and the peak collector current is 12 Adc.
- What is the typical DC current gain of the BDX54CG?
The typical DC current gain (hFE) is 2500 at IC = 4.0 Adc.
- What is the collector-emitter saturation voltage of the BDX54CG?
The collector-emitter saturation voltage (VCE(sat)) is 2.0 Vdc (Max) at IC = 3.0 Adc.
- What is the operating temperature range of the BDX54CG?
The operating and storage junction temperature range is -65°C to +150°C.
- What package type is the BDX54CG available in?
The BDX54CG is available in a TO-220 (Pb-Free) package.
- What are some common applications of the BDX54CG transistor?
It is commonly used in general-purpose amplifiers, low-speed switching applications, power management, and automotive and industrial control systems.
- What is the total device dissipation at TC = 25°C for the BDX54CG?
The total device dissipation at TC = 25°C is 65 W.
- Does the BDX54CG have built-in base-emitter shunt resistors?
- What is the collector-emitter sustaining voltage of the BDX54CG?
The collector-emitter sustaining voltage (VCEO(sus)) is 100 Vdc (Min).
- How should I handle the BDX54CG to avoid damage?
Avoid exceeding the maximum ratings specified in the datasheet, and refer to the onsemi Soldering and Mounting Techniques Reference Manual for proper handling and mounting procedures.