BDX54CG
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onsemi BDX54CG

Manufacturer No:
BDX54CG
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX54CG is a high-performance Darlington transistor manufactured by onsemi. This device is part of the BDX54 series, which includes complementary silicon power transistors designed for general-purpose amplifier and low-speed switching applications. The BDX54CG is a PNP transistor, offering high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power management and control circuits.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Sustaining Voltage VCEO(sus) 100 - Vdc
Collector Current - Continuous IC - 8.0 Adc
Collector Current - Peak IC - 12 Adc
Base Current IB - 0.2 Adc
DC Current Gain hFE 750 - -
Collector-Emitter Saturation Voltage VCE(sat) - 2.0 Vdc
Base-Emitter Saturation Voltage VBE(sat) - 2.5 Vdc
Total Device Dissipation @ TC = 25°C PD - 65 W
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 - °C

Key Features

  • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc, ensuring high amplification capabilities.
  • Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc, reducing power losses in switching applications.
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors: Enhances stability and simplifies circuit design.
  • High Collector-Emitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min), providing robust performance under various operating conditions.
  • Wide Operating Temperature Range: -65°C to +150°C, making it suitable for diverse environmental conditions.

Applications

  • General-Purpose Amplifiers: Suitable for various amplifier circuits due to its high current gain and low saturation voltage.
  • Low-Speed Switching: Ideal for applications requiring reliable switching performance at lower speeds.
  • Power Management: Can be used in power supply circuits, motor control, and other power management applications.
  • Automotive and Industrial Control Systems: Robust enough for use in automotive and industrial environments where reliability and performance are critical.

Q & A

  1. What is the maximum collector current of the BDX54CG transistor?

    The maximum continuous collector current is 8.0 Adc, and the peak collector current is 12 Adc.

  2. What is the typical DC current gain of the BDX54CG?

    The typical DC current gain (hFE) is 2500 at IC = 4.0 Adc.

  3. What is the collector-emitter saturation voltage of the BDX54CG?

    The collector-emitter saturation voltage (VCE(sat)) is 2.0 Vdc (Max) at IC = 3.0 Adc.

  4. What is the operating temperature range of the BDX54CG?

    The operating and storage junction temperature range is -65°C to +150°C.

  5. What package type is the BDX54CG available in?

    The BDX54CG is available in a TO-220 (Pb-Free) package.

  6. What are some common applications of the BDX54CG transistor?

    It is commonly used in general-purpose amplifiers, low-speed switching applications, power management, and automotive and industrial control systems.

  7. What is the total device dissipation at TC = 25°C for the BDX54CG?

    The total device dissipation at TC = 25°C is 65 W.

  8. Does the BDX54CG have built-in base-emitter shunt resistors?
  9. What is the collector-emitter sustaining voltage of the BDX54CG?

    The collector-emitter sustaining voltage (VCEO(sus)) is 100 Vdc (Min).

  10. How should I handle the BDX54CG to avoid damage?

    Avoid exceeding the maximum ratings specified in the datasheet, and refer to the onsemi Soldering and Mounting Techniques Reference Manual for proper handling and mounting procedures.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:65 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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BDX54CG
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Similar Products

Part Number BDX54CG BDX34CG BDX53CG BDX54BG BDX54C
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Active
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 10 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2.5V @ 6mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A 2V @ 12mA, 3A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V 750 @ 3A, 3V
Power - Max 65 W 70 W 65 W 65 W 60 W
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220

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