Overview
The BDX53BG is a medium-power, complementary silicon transistor produced by onsemi. This device is part of the BDX53 and BDX54 series, which include both NPN (BDX53B, BDX53C) and PNP (BDX54B, BDX54C) configurations. The BDX53BG is specifically an NPN transistor designed for general-purpose amplifier and low-speed switching applications.
These transistors are known for their high DC current gain, low collector-emitter saturation voltage, and robust construction, making them suitable for a variety of electronic circuits.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | 80 | - | Vdc |
| Collector Current - Continuous | IC | - | 8.0 | Adc |
| Collector Current - Peak | IC | - | 12 | Adc |
| Base Current | IB | - | 0.2 | Adc |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | 2.0 | Vdc @ IC = 3.0 Adc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | 2.5 | Vdc @ IC = 3.0 Adc |
| DC Current Gain | hFE | 750 | - | - @ IC = 3.0 Adc, VCE = 3.0 Vdc |
| Total Device Dissipation @ TC = 25°C | PD | - | 65 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | - | °C |
Key Features
- High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc, ensuring high amplification capabilities.
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc, reducing power losses in saturation.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors: Enhances stability and simplifies circuit design.
- Robust Operating Range: Collector-Emitter Sustaining Voltage up to 80 Vdc and Collector Current up to 8.0 Adc.
- Wide Operating Temperature Range: From -65°C to +150°C, making it suitable for various environmental conditions.
Applications
- General-Purpose Amplifiers: Suitable for a wide range of amplification tasks due to its high DC current gain and low saturation voltage.
- Low-Speed Switching: Ideal for applications where switching speeds are not critical but high current handling is necessary.
- Power Supplies and Regulators: Can be used in power supply circuits and voltage regulators due to its robust current handling and voltage sustain capabilities.
- Motor Control and Drive Circuits: Applicable in motor control circuits where high current and voltage handling are required.
Q & A
- What is the typical DC current gain of the BDX53BG transistor?
The typical DC current gain (hFE) of the BDX53BG transistor is 2500 at IC = 4.0 Adc.
- What is the maximum collector-emitter saturation voltage for the BDX53BG?
The maximum collector-emitter saturation voltage (VCE(sat)) for the BDX53BG is 2.0 Vdc at IC = 3.0 Adc.
- What is the maximum continuous collector current for the BDX53BG?
The maximum continuous collector current (IC) for the BDX53BG is 8.0 Adc.
- What is the operating temperature range for the BDX53BG?
The operating and storage junction temperature range for the BDX53BG is from -65°C to +150°C.
- What type of package does the BDX53BG come in?
The BDX53BG comes in a TO-220 package, which is Pb-free.
- What are some common applications for the BDX53BG transistor?
The BDX53BG is commonly used in general-purpose amplifiers, low-speed switching applications, power supplies, and motor control circuits.
- What is the maximum base current for the BDX53BG?
The maximum base current (IB) for the BDX53BG is 0.2 Adc.
- What is the total device dissipation at TC = 25°C for the BDX53BG?
The total device dissipation at TC = 25°C for the BDX53BG is 65 W.
- Does the BDX53BG have built-in base-emitter shunt resistors?
Yes, the BDX53BG has monolithic construction with built-in base-emitter shunt resistors.
- What is the collector-emitter sustaining voltage for the BDX53BG?
The collector-emitter sustaining voltage (VCEO(sus)) for the BDX53BG is 80 Vdc.
- Is the BDX53BG suitable for high-speed switching applications?
No, the BDX53BG is not suitable for high-speed switching applications; it is better suited for low-speed switching and general-purpose amplification.
